1 %V li. li. r Dmed1.pdf >1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C.a) Does the material have a positive or a negative temperature coefficient? Explain briefly.b) Determine the value of the temperature coefficient, a, at 20°C.c) Assuming the resistance versus temperature function to be linear, determine the expected resistance ofthe material at 0°C (the freezing point of water) and at 100°C (the boiling point of water).2. Find the equivalent resistance Rab in the circuits of Figure below.310060 230 2bo-wwww{ 20 23. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), adevice of increasing importance in electronic design. (Biasing simply means the application of delevels to establish a particular set of operating conditions.) Even though you may be unfamiliar withthe FET, you can perform the following analysis using only the basic laws introduced in your lecturesand the information provided on the diagram.a. Determine the voltages VG and Vs.b. Find the currents 1, h, Io, and Is.c. Determine Vos.d. Calculate VpoVoo = 16 VOD'as - -1.75 V |T6IG - 0AIn = I5-R 270 kno'sRs1.5 ka4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from2mA source.ww2 kn(1) 2 mAV.1000II

Answered: Image /qna-images/answer/390c5ffd-0937-4afa-b43d-02f2facc14a6.jpg

2. Find the equivalent resistance Rab in the circuits of Figure below. 102 60 2 30 0 ww ww 202 3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a ww-

2. Find the equivalent resistance Rab in the circuits of Figure below. 102 60 2 30 0 ww ww 202 3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a ww-

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

100%

1 %V li. li. r D
med1.pdf >
1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C.
a) Does the material have a positive or a negative temperature coefficient? Explain briefly.
b) Determine the value of the temperature coefficient, a, at 20°C.
c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of
the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water).
2. Find the equivalent resistance Rab in the circuits of Figure below.
3100
60 2
30 2
bo-
ww
ww
{ 20 2
3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a
device of increasing importance in electronic design. (Biasing simply means the application of de
levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with
the FET, you can perform the following analysis using only the basic laws introduced in your lectures
and the information provided on the diagram.
a. Determine the voltages VG and Vs.
b. Find the currents 1, h, Io, and Is.
c. Determine Vos.
d. Calculate Vpo
Voo = 16 V
OD
'as - -1.75 V |T6
IG - 0A
In = I5
-
R 270 kn
o's
Rs1.5 ka
4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from
2mA source.
ww
2 kn
(1) 2 mA
V.
1000
II

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