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1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature cocfficient, a, at 20°C. e) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0'C (the freezing point of water) and at 100C (the boiling point of water).

1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature cocfficient, a, at 20°C. e) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0'C (the freezing point of water) and at 100C (the boiling point of water).

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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74O med1.pdf 1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature cocfficient, a, at 20°C. c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water). 2. Find the equivalent resistance Rab in the circuits of Figure below. a o 102 60 2 30 2 ww- www 20 2 3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a device of increasing importance in electronic design. (Biasing simply means the application of de levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with the FET, you can perform the following analysis using only the basic laws introduced in your lectures and the information provided on the diagram. a. Determine the voltages Fo and Vs. b. Find the currents /1, 2, Io, and Is. Determine Vos. d. Calculate Vo Voo - 16 V R2 MA Ro25 kn OD Vas = -1.75 V G IG = 0A Ip - Is o's Is R270 kn Rs1.5 k 4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from 2mA source. ww 2 kn () 2 mA 2v, 31 kn 1000 V
Transcribed Image Text:74O med1.pdf 1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature cocfficient, a, at 20°C. c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water). 2. Find the equivalent resistance Rab in the circuits of Figure below. a o 102 60 2 30 2 ww- www 20 2 3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a device of increasing importance in electronic design. (Biasing simply means the application of de levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with the FET, you can perform the following analysis using only the basic laws introduced in your lectures and the information provided on the diagram. a. Determine the voltages Fo and Vs. b. Find the currents /1, 2, Io, and Is. Determine Vos. d. Calculate Vo Voo - 16 V R2 MA Ro25 kn OD Vas = -1.75 V G IG = 0A Ip - Is o's Is R270 kn Rs1.5 k 4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from 2mA source. ww 2 kn () 2 mA 2v, 31 kn 1000 V
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