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4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from 2mA source. ww 2 kn 2v, 100 2 mA

4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from 2mA source. ww 2 kn 2v, 100 2 mA

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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ZAIN IQ l.. med1.pdf 1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature coefficient, a, at 20°C. c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water). 2. Find the equivalent resistance Rab in the circuits of Figure below. a o 10Ω 60 2 30 2 bo ww 202 3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a device of increasing importance in electronic design. (Biasing simply means the application of de levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with the FET, you can perform the following analysis using only the basic laws introduced in your lectures and the information provided on the diagram. a. Determine the voltages VG and Vs. b. Find the currents I1, 12, Ip, and Is. c. Determine Vps. d. Calculate VDG. VDD - 16 V 오 Rp2.5 kn OD R1 2 Mn Ves--1.75 V IG = 0A Ip - Is VGS o's Is R3270 kn Rs 1.5 kN 4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from 2mA source. ww 2 kn ww 2 mA 1000 V. ww-
Transcribed Image Text:ZAIN IQ l.. med1.pdf 1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature coefficient, a, at 20°C. c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water). 2. Find the equivalent resistance Rab in the circuits of Figure below. a o 10Ω 60 2 30 2 bo ww 202 3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a device of increasing importance in electronic design. (Biasing simply means the application of de levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with the FET, you can perform the following analysis using only the basic laws introduced in your lectures and the information provided on the diagram. a. Determine the voltages VG and Vs. b. Find the currents I1, 12, Ip, and Is. c. Determine Vps. d. Calculate VDG. VDD - 16 V 오 Rp2.5 kn OD R1 2 Mn Ves--1.75 V IG = 0A Ip - Is VGS o's Is R3270 kn Rs 1.5 kN 4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from 2mA source. ww 2 kn ww 2 mA 1000 V. ww-
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