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(1) For n channel GaAs MESFET with temperature and of 300 K, a=0.25//m and 0.85 v. Find the channel doping concentration with v, = 0.5 V. (a) 5.44x10²¹ m (b) 5.22x10 cm (c) 5.19x10¹ cm (d) 5.41x10¹ cm³

(1) For n channel GaAs MESFET with temperature and of 300 K, a=0.25//m and 0.85 v. Find the channel doping concentration with v, = 0.5 V. (a) 5.44x10²¹ m (b) 5.22x10 cm (c) 5.19x10¹ cm (d) 5.41x10¹ cm³

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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-Electr (1) For n channel GaAs MESFET with temperature and of 300 K, a = 0.25//m and 0.85 v. Find the channel doping concentration with v, = 0.5 V. (a) 5.44x102¹ m (b) 5.22x10 cm (c) 5.19x10¹ cm (d) 5.41x10¹ cm³
Transcribed Image Text:-Electr (1) For n channel GaAs MESFET with temperature and of 300 K, a = 0.25//m and 0.85 v. Find the channel doping concentration with v, = 0.5 V. (a) 5.44x102¹ m (b) 5.22x10 cm (c) 5.19x10¹ cm (d) 5.41x10¹ cm³
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