T- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V , VDD=12V ( gm=4500µS ).II A JFET datasheet gives VGSIOFF) = -4V and Ipss = 5 mA. Determine the values of Ip for VGs from 0 V to -5V in1V steps. Plot the transfer curve from these data on a graph sheet.III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-sourceresistively loaded amplifier uses this MOSFET. The resistive load RL = 1,000 ohms and the drainpower supply (VDD) = 3 volts.(a) Draw the load line over the l-V characteristics shown immediately below..(b) What is the slope of the resistive load line?VDp =3 volts6 mAR.5 mA4 mA3 mA2 mA1 mA3 V4 VsvDS

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Answered: 1- Design a CS amplifier using E-MOSFET…

Engineering

Electrical Engineering

1- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V, VDD=12V (gm34500µS).

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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