1- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V, VDD=12V (gm34500µS).
1- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V, VDD=12V (gm34500µS).
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![T- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V , VDD=12V ( gm=4500µS ).
II A JFET datasheet gives VGSIOFF) = -4V and Ipss = 5 mA. Determine the values of Ip for VGs from 0 V to -5V in
1V steps. Plot the transfer curve from these data on a graph sheet.
III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source
resistively loaded amplifier uses this MOSFET. The resistive load RL = 1,000 ohms and the drain
power supply (VDD) = 3 volts.
(a) Draw the load line over the l-V characteristics shown immediately below..
(b) What is the slope of the resistive load line?
VDp =3 volts
6 mA
R.
5 mA
4 mA
3 mA
2 mA
1 mA
3 V
4 V
sv
DS](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F579feb40-7f26-45ef-9d30-8f3a3e7aad87%2F9f35194b-0dfa-4aa9-bbc7-ca715aa9cf48%2F8xtvrlh_processed.jpeg&w=3840&q=75)
Transcribed Image Text:T- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V , VDD=12V ( gm=4500µS ).
II A JFET datasheet gives VGSIOFF) = -4V and Ipss = 5 mA. Determine the values of Ip for VGs from 0 V to -5V in
1V steps. Plot the transfer curve from these data on a graph sheet.
III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source
resistively loaded amplifier uses this MOSFET. The resistive load RL = 1,000 ohms and the drain
power supply (VDD) = 3 volts.
(a) Draw the load line over the l-V characteristics shown immediately below..
(b) What is the slope of the resistive load line?
VDp =3 volts
6 mA
R.
5 mA
4 mA
3 mA
2 mA
1 mA
3 V
4 V
sv
DS
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