IMG_3475

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Question Completion Status: A Moving to another question will save this response. Quèstion 1 Using complete diode model and assuming that the forward resistance of thediode is 152 and a Germanium diode, the voltage across the resistance R equals to R. 5kQ 12V 11.65 V 11.7 V 12 V None of the above.

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Determine the n-type doping concentration to meet the following specifications for a Si p–n junction:NA=1018 cm–3, Emax = 4 × 105 V/cm at VR = 30 V, T = 300 K.     Please answer in typing format please

Departments ETC CIMS Determine the current Ir1, Ir2, Ir3 in mA and the voltage across R1 for the network shown in the figure if E=20 V. Assume diode to be Germanium.( R1=5.2kOhm, R2 2.2kOhm, R3=1.8kOhm) RI R2 R3 IR1 IR2 IR3 VR1

1. Use this information to answer Question 1-2: Capacitance-voltage measurements were performed on a one-sided pn junction made of silicon. When the measured data were plotted on a1/C2-V graph, the slope was 7.5 x 1025 F-V-1 and the x-intercept was 0.8 V . The diode has a cross sectional area of 10-cm?. Find the doping density in the lightly doped side in unit of cm3. Answers within 5% eror will be considered correct. Enter answer here 2. Using the x-intercept, find the doping density in the heavily doped side in unit of cm-. Answers within 10% error will be considered correct. Enter answer here

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Consider a palladium Schottky diode at T = 300 K formed on n-type germanium doped at N = 5 X 1018 cm 3. Determine the electric field at the metal junction for VR = 2 V. O Emax = 6.00 X 106 V/cm Emax = 3.11 X 106 V/cm Emax = 2.01 X 106 V/cm Emax = 1.83 X 106 V/cm

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