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Capacitance-voltage measurements were performed on a one-sided pn junction made of silicon. When the measured data were plotted on a1/C²-V graph, the slope was 7.5 x 105F²V'and the x-intercept was 0.8 V

Capacitance-voltage measurements were performed on a one-sided pn junction made of silicon. When the measured data were plotted on a1/C²-V graph, the slope was 7.5 x 105F²V'and the x-intercept was 0.8 V

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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1. Use this information to answer Question 1-2: Capacitance-voltage measurements were performed on a one-sided pn junction made of silicon. When the measured data were plotted on a1/C2-V graph, the slope was 7.5 x 1025 F-V-1 and the x-intercept was 0.8 V . The diode has a cross sectional area of 10-cm?. Find the doping density in the lightly doped side in unit of cm3. Answers within 5% eror will be considered correct. Enter answer here 2. Using the x-intercept, find the doping density in the heavily doped side in unit of cm-. Answers within 10% error will be considered correct. Enter answer here
Transcribed Image Text:1. Use this information to answer Question 1-2: Capacitance-voltage measurements were performed on a one-sided pn junction made of silicon. When the measured data were plotted on a1/C2-V graph, the slope was 7.5 x 1025 F-V-1 and the x-intercept was 0.8 V . The diode has a cross sectional area of 10-cm?. Find the doping density in the lightly doped side in unit of cm3. Answers within 5% eror will be considered correct. Enter answer here 2. Using the x-intercept, find the doping density in the heavily doped side in unit of cm-. Answers within 10% error will be considered correct. Enter answer here
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