IMG_9657

only the sub-part d and e

Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below (assume Si diodes) V_DC V DC 0,75 (1+ 0.25 V_SIN V SIN RL -1 V SOR V_SQR 0.75 -0.75 V TRI 1 V_TRI -1

An Si abrupt p-n junction is doped with N,-10" cm" on p-side and N, - 5x10" on n-side. Find the penetration of transition region into n-side at equilibrium (300 K). (a) 0.455 um (b) 0.00227 um (c) 0.227 um (d) 0.00455 um

An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X -3 10¹7 cm-³ and N₂ = 5 X 10¹6 cm-³ at T = a 300 K. Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level and add the two values together to get Vbi. Vbi = 0.856 V O Vbi Vbi = 0.814 V Vbi = 0.796 V Vbi = 0.773 V o Vbi

Only one of them please

Help please  not sure about answer

An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X 1017 cm-3 cm³ and Na and N₂ = 5 X 1016 cm¯³ at T = 300K. Determine the peak electric field for this junction for a reverse voltage of 2 V. Emax = 3.88 X 105 V/cm Emax = 1.35 X 105 V/cm Emax 1.70 X 105 V/cm O Emax = 3.21 X 105 V/cm =

The circle is below(for D1-1N4148 is 1N4148 Diode).  and also there have a table(. Note that the first 3 rows of measurement are obtained when the diode is reverse-biased) Vout_dc (V) VD (V) ID (μA) 0.51 -0.51 0.0 0.23 -0.20 0.0 0.10 -0.08 0.0 0.00 0.00 0.0 0.05 0.04 0.0 0.11 0.09 0.0 0.17 0.15 0.1 0.19 0.20 0.1 0.27  0.25 0.4 0.32 0.30 1.6 0.36 0.34 3.1 0.42 0.40 8.2 0.46 0.42 14.3 0.52 0.47 28.0 Questions: 1)  plot the diode’s I-V characteristics on a linear scale (ID on the y-axis and VD on the x-axis)  2)  [RP4] 3)  [RP5]

Q10 Needed to be solved multiple choice question correctly in 20 minutes and get the thumbs up please solve both

FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…

An abrupt gallium arsenide pn junction at zero bias has dopant concentrations of Nd = 1 X 10¹7 cm-³ and N₂ = 5 X 10¹6 cm -3 Na -3 at T = 300 K. Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level and add the two values together to get Vbi- Vbi = 1.214 V Vbi = 1.173 V O Vbi Vbi = 1.323 V O Vbi Vbi = 1.264 V

Q5) a) Calculate the minimum and the maximum input voltages that can be made by the given diode. The data sheet gives: Izmin = 2mA,Izmax=30mA, and Vz = 5 V. b) In which region of I-V characteristic does the diode operate ? Why? c) What is the main function for the given circuit? V1 =OV R1 10052 2 D1 1N5247B