433HW10allee (1)

FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…

Please answer the question 1 a, b, and c with details on why it is true or false. Please make handwriting legible. Thank you.

What type of semiconductor device is the following current-voltage relationship most likely to result from? Current I Voltage V Bipolar pnp in the inverse active mode Avalanche photodiode Tunnel pn diode Schottky diode Zener diode

Draw a chip layout/diagram for the image using a 74LS00 chip.

How do we know current flows in source terminal? Is this common for n-type mosfet? What is an n-type mosfet?

VI Ru Ri Vz I, Io R2 = 3837.79 O. R3 = 3989.3 Q. %3D R4 = 2898.06 Q. V1 = 4.8 V. V2 = 8.1 V. 11 = 0.0099 A Determine the following: a.) The output current lo %3D

A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.

A clamper circuit has 20 Vp-p. 100Hz square wave input voltage. The circuit consists of silicon diode IN4001 and 3V battery as shown in Figure 1 C. 0.1 µF D R Vi(t) 50 k2 Vo(t) 3 V Figure 1 a) Find the output voltage for all input voltages values. b) Sketch the output waveform, Vo(t).

Create the Diode Characteristic Curve for this data values. Diode Voltage (VD) Diode Current (ID) 0.890904 9.109 0.884515 7.115 0.876023 5.124 0.86333 3.137 0.837654 1.162 0.793023 0.206975 0.779114 0.120885 0.754079 0.04592 0.695273 0.004727 0.599882 0.000118256 0.499998 0.000002487 0.4 5.2464E-08 0.3 1.39E-09 0.2 2.23008E-10 0.1 1.00568E-10 0 0 -0.1 -1.0011E-09 -0.2 -2.00211E-09 -0.3 -3.0031E-09 -0.4 -4.00411E-09 -0.5 -5.0051E-09 -0.6 -6.0061E-09 -0.7 -7.0071E-09 -0.8 -8.0081E-09 -0.9 -9.00911E-09 -1 -1.001E-08 -2 -2.002E-08 -4 -4.004E-08 -6 -6.006E-08 -8 -8.008E-08 -10 -1.001E-07 -20 -2.002E-07 -40 -4.004E-07 -60 -6.006E-07 -80 -8.008E-07 -100 -0.000001001 -200 -0.000002002 -300 -0.000003003 -400 -0.000004004 -500 -0.000005005

cuicuit designed in winknown isubuenit, va resistance R = 2.8K2 and two identical silicon BITS T1 and 12 with 72 and T2 with forward gains BF = 200. The supply voltage Vcc =-25 volts Vcc=25 volts Sub-circuit JICA T2 IB₁1 IB12 VIR R = 28K2 VIC, 2 GIND IB, 1 and Ic, s designate the base and collector current of T2 vespectively where as the courrents IB,₁2 and IG2 designate the base and the collector currents of T2 respectively. T2 and 12 operate in forward active mode Assume that IB, 1 and IB₁2 are equal · VBE, on = 0.8 molt (Threshold woltage) (a) What is the value of the current IR through vesistance R.? (MA) (b) what is the value of the base vaurrent IB, 1? (MA) (c) what is the value of the collector Ic₁₁? (MA) (d) The evicuit idesigned using Resistance Rand Transistors T₁ and To performs an electronic function to connect to sub circut which function is it?

The data sheet of a JFET gives the following information: IDSS = 3 mA, VGS(off)= - 6 V, and gm(max)= 5000 . For VGS = - 4 V. find the drain current.

2) approximately draw Vout for the circuits below, separately. Point out which one is a rectifier which one is a clipping circuit. Use Vp = 0.7V. Input signal 2tVin 1.5 1 0.5 -0.5 -1 -1.5 -2 Circuit (a) Circuit (b) Vin Vout Vin Vaut R 2 Vonut 1.5 1.5 1 1 0.5 0.5 1 3 4 7 1 2 3 6 7 -0.5 -0.5 -1 -1 -1.5 -1.5 -2, -2

Shown below is a section from the datasheet of 74LS32, a quad 2-input OR chip. What is the noise margin high (in V) of this chip? Limits Symbol Parameter Min Typ Max Unit VIH Input HIGH Voltage 2.0 V VIL Input LOW Voltage V 0.8 VIK Input Clamp Diode Voltage -0.65 -1.5 V V VOH Output HIGH Voltage 3.5 V V VOL Output LOW Voltage 0.35 0.5 V 20 μA IH Input HIGH Current 0.1 mA IIL Input LOW Current -0.4 mA los Short Circuit Current (Note 1) -100 mA Power Supply Current Icc 6.2 Total, Output HIGH mA Total, Output LOW 9.8 74 74 74 2.7 -20

What scaling challenges and device performance improvements led to the change from planar MOSFET geometries to the FinFET geometry?

Please find Ic and Vce.

Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below (assume Si diodes) V_DC V DC 0,75 (1+ 0.25 V_SIN V SIN RL -1 V SOR V_SQR 0.75 -0.75 V TRI 1 V_TRI -1