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Determine the maximum forward current and the maximum reverse voltage for the diodes IN4001, IN34, and IN5231B using the datasheets attached.

Determine the maximum forward current and the maximum reverse voltage for the diodes IN4001, IN34, and IN5231B using the datasheets attached.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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þetermine the maximum forward current and the maximum reverse voltage for the diodes IN4001, IN34, and IN5231B using the datasheets attached. GERMANIUM DIODES SIGNAL DIODES – Peint-Contact ) (See Outine Drawing No. 37) Hasimum Farward Curent-me Max. Cant Revene Valtge Nanimum Revene Cumet Mi For ward Curne +IV me Tyae Regarent Peak PRV Avemge Surge Valt Velt Comments IN4 1 5.0 -10 Genl perpo INA 60 Se 190 30 INSsle 15e -10 30 Matched pair of INHA INM 100 150 30 S00 High re vatag INSMA 150 40 -3 150 40 RENI IN4 40 833 INSI IN Se 40 100 300 25 160 150 400 40 INS2A 150 400 100 General purpon detecter INS4 35 10 INSA INTA 25 15 5.0 -10 -50 video detector 35 Discrete POWER & Signal Technologies National Semiconductor 1N5226B 1N5257B Series Half Watt Zeners Absolute Maximum Ratings Tolerance: B- 5% TA-ruess erwe note Parameter Value Units 65 00 Srage Temoerature Range Maim Juncion Operng Tevperatre Lead Temperature (1/16" trom cone for 10 seconda) Tata DeviceDesipeton Derale e S Surge Power 230 S00 40 10 wwing aty ore may ep DO-35 based onamamun eng ped Electrical Characteristics TA- omere noe Zz VR (V) Te IR Device (mA 33 20 24 23 22 19 20 20 20 20 20 1,600 1,700 1.900 2,000 1.900 1,000 1,600 1,600 1.000 750 500 500 600 800 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 26 15 10 5.0 0.07 025 0.25 025 0.25 035 0.25 0.25 0.25 0.25 0.25 025 IN2278 1NS22 3.6 3.9 43 4.7 5.1 5.6 -0.06 0.050 0.03 0.3 0.030 0038 0.045 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 1N2310 1 70 70 62 IN 1N52378 75 8.0 6.5 8.7 8.1 0.0e2 O 065 0.25 6.5 7.0 6.0 8.4 9.1 10 025 0.25 0.25 0.075 INS418 11 22 600 600 2.0 1.0 025 V, Fownd Voltege-1.1 V Maimuma L-200 mA for a 1NS200 eries O077 NGTE Nationa preterred evices in BOLD as aaasa alaalaalalal eseanan 1N5226B - 1N5257B Series
Transcribed Image Text:þetermine the maximum forward current and the maximum reverse voltage for the diodes IN4001, IN34, and IN5231B using the datasheets attached. GERMANIUM DIODES SIGNAL DIODES – Peint-Contact ) (See Outine Drawing No. 37) Hasimum Farward Curent-me Max. Cant Revene Valtge Nanimum Revene Cumet Mi For ward Curne +IV me Tyae Regarent Peak PRV Avemge Surge Valt Velt Comments IN4 1 5.0 -10 Genl perpo INA 60 Se 190 30 INSsle 15e -10 30 Matched pair of INHA INM 100 150 30 S00 High re vatag INSMA 150 40 -3 150 40 RENI IN4 40 833 INSI IN Se 40 100 300 25 160 150 400 40 INS2A 150 400 100 General purpon detecter INS4 35 10 INSA INTA 25 15 5.0 -10 -50 video detector 35 Discrete POWER & Signal Technologies National Semiconductor 1N5226B 1N5257B Series Half Watt Zeners Absolute Maximum Ratings Tolerance: B- 5% TA-ruess erwe note Parameter Value Units 65 00 Srage Temoerature Range Maim Juncion Operng Tevperatre Lead Temperature (1/16" trom cone for 10 seconda) Tata DeviceDesipeton Derale e S Surge Power 230 S00 40 10 wwing aty ore may ep DO-35 based onamamun eng ped Electrical Characteristics TA- omere noe Zz VR (V) Te IR Device (mA 33 20 24 23 22 19 20 20 20 20 20 1,600 1,700 1.900 2,000 1.900 1,000 1,600 1,600 1.000 750 500 500 600 800 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 26 15 10 5.0 0.07 025 0.25 025 0.25 035 0.25 0.25 0.25 0.25 0.25 025 IN2278 1NS22 3.6 3.9 43 4.7 5.1 5.6 -0.06 0.050 0.03 0.3 0.030 0038 0.045 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 1N2310 1 70 70 62 IN 1N52378 75 8.0 6.5 8.7 8.1 0.0e2 O 065 0.25 6.5 7.0 6.0 8.4 9.1 10 025 0.25 0.25 0.075 INS418 11 22 600 600 2.0 1.0 025 V, Fownd Voltege-1.1 V Maimuma L-200 mA for a 1NS200 eries O077 NGTE Nationa preterred evices in BOLD as aaasa alaalaalalal eseanan 1N5226B - 1N5257B Series
FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR 50 100 200 400 600 80 1000 V. 35 70 140 280 420 560 700 (Rated VR) 50 800 100 200 4D0 60D0 1C00 TA = 20°C TA- 100°C S.0 500 1.1 HA HA Maximum Forward Voitnge 1.0 A Maximum Ful Load Reverse Current, Full Cycle Typical Juneton Capacitance Vn-4.0 V, t-1,0 MHz 30 TA= 75°C 15
Transcribed Image Text:FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR 50 100 200 400 600 80 1000 V. 35 70 140 280 420 560 700 (Rated VR) 50 800 100 200 4D0 60D0 1C00 TA = 20°C TA- 100°C S.0 500 1.1 HA HA Maximum Forward Voitnge 1.0 A Maximum Ful Load Reverse Current, Full Cycle Typical Juneton Capacitance Vn-4.0 V, t-1,0 MHz 30 TA= 75°C 15
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