ENGINEERING DESIGN PROCESS
3rd Edition
ISBN: 9781305253285
Author: HAIK
Publisher: CENGAGE L
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Chapter 8.9, Problem 3P
Apply the structured-question technique to a product such as a coffee machine. List all possible features that you and your team can work on to improve an existing product.
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I want to know what does it look in a breadboard circuit, because I want to created it but I not sure it is build properly, can you give me an illustuation base on this image, it do need to real, something like virutal example
Charge neutrality
Since doped semiconductor remains electroneutral, the concentration
of negative charges equals the concentration of positive charges.
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Concentration of electrons and holes
1. Calculate concentrations of electrons and holes at room temperature in Si
and Ge with donor concentration of 1.5x10¹7 cm³ and acceptor
concentration of 8x1016 cm-3.
2. Will these concentrations change much with the temperature increase to
100°C?
Answer the questions on the end of the image please
Chapter 8 Solutions
ENGINEERING DESIGN PROCESS
Ch. 8.9 - Compare (a) the systematic design process that...Ch. 8.9 - Apply the structured-question technique to a...Ch. 8.9 - Prob. 4PCh. 8.9 - Prob. 5PCh. 8.9 - Prob. 6PCh. 8.9 - Prob. 7PCh. 8.9 - Prob. 8PCh. 8.9 - Prob. 9PCh. 8.9 - Without a creative objective tree, you could not...Ch. 8.9 - Prob. 11P
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- Answer these two questions on the end of the image, please 1.Calculate intrinsic carrier concentration for Si, Ge and GaAs at temperatures -20°C, 20°C (room temperature) and 120°C 2.Compare the obtained data with n and p shown on previous slide 25arrow_forwardFind the reinforcements for the mid span and supports for an interior 9 in. thick slab (S-2) in thefloor from Problem 1. Ignore the beams and assume that the slab is supported by columns only (i.e.a flat plate). Sketch the slab and show the reinforcements including the shrinkage andtemperature reinforcement steel. Use f c’ = 4,000 psi and f y = 60,000 psi.NOTE: Problem 3 requires additional column placements at locations such as C and D. The stripof slab between these two columns will behave as a beam support to the one-way slab (with 10 ft.span). Problem 1. The figures below shows the framing plan and section of a reinforced concrete floor system.Floor beams are shown as dotted lines. The weight of the ceiling and floor finishing is 6 psf,that of the mechanical and electrical systems is 7 psf, and the weight of the partitions is 180psf. The floor live load is 105 psf. The 7 in. thick slab exterior bay (S-1) is reinforced with #5rebars @ 10 in. o.c. as the main positive…arrow_forwardCan you help me achieve the requirements using Arduino? I have encountered some issues with these requirements. Q.2: Suppose you have two push buttons connected to ports (0 & 1) and four LED's connected to ports (6-9). Write a program to flash ON the odd LED's if we press the switch 0 for 4s, flash ON the even LED's if we press the switch 1 for 5s and flash ON all the LED's otherwise for 6s.arrow_forward
- Charge carrier concentration in doped semiconductor: compensation n = Na - Na Na - Na >> ni n-type p = n₁²/n 2 if N₂ >> N₁, n = N₁_ and _p=n² / Na d p = Na-Nd p-type Na-Na >> n₁ d 2 n = n₁₂²/p 2 if N₁ >> N₁, p = N₁ and n = n² / Na a n-type Dopant compensation: Examples d n = Na-N₁ = 4×10¹ cm¯ -3 ++++++ n = 4×1016 cm-³ N=6×1016 cm-3 p=n/n=1020/4×1016 = 2.5×10³ cm p-type -3 p=Na-N₁ =8×10 −6×1016 = 2×10¹6 cm³ n=n²/p=1020/2×101 =5×10³ cm³ N2×1016 cm³ ++++++ N=6x1016 cm-3 N = 8×1016 cm-3 p=2×1016 cm³ The resulting charge carrier concentration in compensated semiconductor approximately equals the difference between the donor and acceptor concentrations. Charge carrier concentration in n-type and p-type semiconductors 1. Calculate concentrations of electrons and holes at room temperature in Si containing 2x1017 cm³ of donors and 8x1016 -3 cm³ of acceptors. Assume that Na, Nd >> n;. αν 2. Calculate concentrations of electrons and holes at room temperature in Ge containing 2x10¹7 cm³ of…arrow_forwardlonization energy of dopants in semiconductors lonization energy of shallow donors and acceptors can be evaluated using hydrogenic model: lonization energy E Hion and orbital radius a, of hydrogen atom Hydrogen Atom moe4 EHion = 13.6 eV a = 8ε²h² Απερη mee² = 5.2918 x 10-11 m lonization energy Eion and orbital radius D,A of donors and acceptors electron m* e4 Eion = ~50 meV 8K² &²h² 4πεερη2 "D,A 1 nm m*e² Orbit of an electron bound to a donor in a semiconductor crystal. Energy levels of donors and acceptors Conduction Band ↓ Ec -Ed Donor Level Donor ionization energy Acceptor ionization energy Acceptor Level Εα Ev Valence Band Ionization energy of selected donors and acceptors in silicon Donors Acceptors Dopant Sb P As B Al In Ionization energy, Ec-Ed or Ea-E, (meV) 39 44 54 45 57 160 Hydrogenic model of donors and acceptors Calculate the ionization energies and orbit radii of donors and acceptors in Si and Ge. Dielectric constant of silicon is k = 11.7. Dielectric constant of…arrow_forwardI need help in construct a method in matlab to find the voltage of VR1 to VR4, rhe current, and the power base on that circuit Nominal or Theortical: E1 = 3V , E2 = 9V, E3 = 1.5V R1 =10Kohm, R2 =2Kohm, R3 =1Kohm, R4 =16Kohmarrow_forward
- 1- A study of freeway flow at a particular site has resulted in a calibrated speed-density relationship, as follows u = 57.5(10.008k) a) Find the free-flow speed and jam density b) Derive the equations describing flow versus speed and flow versus density c) Determine the capacity of the road 2- A rural freeway has a demand volume of 6750 v/hr. It has four 3.4 m lanes in each direction. The traffic stream is comprised of 8% heavy vehicles and a PHF of 0.94. The terrain is rolling throughout the segment. What is the level of service for the facility? What is the capacity? 3- For an urban freeway, how many 3.6 m lanes in each direction are needed to achieve LOS C on a freeway with a peak hour traffic volume of 5725 v/hr and with a PHF = 0.967 The traffic stream is comprised of 11% heavy vehicles and the location is level terrain.arrow_forwardProcedure:- 1- Connect the cct. shown in fig.(2). a ADDs Ds Fig.(2) 2-For resistive load, measure le output voltage by using oscilloscope; then sketch this wave. 3- Measure the average values f VL and IL: 4- Repeat steps 2 & 3 but for RL load. Report:- 1- Calculate the D.C. output vcl age theoretically and compare it with the test value. 2- Calculate the harmonic cont :nts of the load voltage, and explain how filter components may be selected. 3- Compare between the three-phase half & full-wave uncontrolled bridge rectifier. 4- Draw the waveform for the c:t. shown in fig.(2) but after replaced Di and D3 by thyristors with a = 30° and a2 = 90° 5- Draw the waveform for the cct. shown in fig.(2) but after replace the 6-diodes by 6- thyristor. 6- Discuss your results. Draw the waves on graph paper please Please solve No. 4 and 5arrow_forwardnot use ai please chat gpt How to draw this in LtSpicearrow_forward
- 4. Discussion: Compare between theoretical effect of KI at first order and second order systems regarding steady-state errors and transient responses with the practical In Experiment Integral Controllerarrow_forwardI would appreciate your help in solving the questions and drawing.arrow_forward498 FET AMPLIFIERS AND SWITCHING CIRCUITS FIGURE 9-54 FIGURE 0.55 5. Identify the type of FET and its bias arrangement in Figure 9-54. Ideally, what is Vas? 6. Calculate the dc voltages from each terminal to ground for the FETs in Figure 9-54. +15 V -10 V +12 V 8 mA Ro 3 mA 1.0 ΚΩ Rp 1.5 ΚΩ Rp 6 mA R₁ 1.0 ΚΩ 10 ΚΩ RG * 10 ΜΩ RG 10 ΜΩ ww Rs R₂ • 330 Ω · 4.7 ΚΩ (a) (b) 7. Identify each characteristic curve in Figure 9-55 by the type of FET that it represents.arrow_forward
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