EBK DATABASE CONCEPTS
EBK DATABASE CONCEPTS
7th Edition
ISBN: 9780133777840
Author: AUER
Publisher: VST
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Chapter 8, Problem 8.7RQ

What problems in operational data create the need to clean data before loading the data into a data warehouse?

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4. Use this information to answer Question 4-8: Consider a step pn junction made of GaAs at T = 300 K. At zero bias, only 20% of the total depletion region width is in the p-side. The built-in potential o₂ = 1.20 V. Determine the acceptor density in the p-side in unit of cm³. Answers within 5% error will be considered correct. Enter answer here 5. Determine the donor density in the n-side in unit of cm³ Answers within 5% error will be considered correct. Enter answer here 6. Determine the depletion region width, z, in the n-side in unit of μm. Answers within 5% error will be considered correct. Enter answer here 7. Determine the depletion region width, xp, in the p-side in unit of μm. Answers within 5% error will be considered correct. Enter answer here 8. Determine maximum electric field in unit of V/cm. Answers within 5% error will be considered correct. Enter answer here
1. Use this information to answer Question 1-3: Consider a step pn junction made of silicon. The p- and n-sides are doped such that Ec - EF = 0.21 eV on the n-side and EF – Ey = 0.18 eV on the p-side. The pn junction is under zero bias and kept at T = 300 K. Find the doping density in the n-side in unit of cm -3. Answers within 5% error will be considered correct. Enter answer here 2. Find the doping density in the p-side in unit of cm -3 Answers within 5% error will be considered correct. Enter answer here 3. Find the built-in potential in unit of V. Answers within 5% error will be considered correct. Enter answer here
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