Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
Question
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Chapter 5, Problem 5.1P
To determine

The area required per 1pF of capacitance for oxide thickness ranging from 2nm to 10nm.

The required dimensions for a square plate capacitor of 10pF.

Expert Solution & Answer
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Answer to Problem 5.1P

Area required per 1pF of capacitance for oxide thickness of 2nm is 5.797×1010m2 , and the dimensions needed for square plate capacitor of 10pF is 24.08μm for its channel length and the channel width.

Area required per 1pF of capacitance for oxide thickness of 10nm is 2.9×109m2 , and the dimensions needed for square plate capacitor of 10pF is 53.85μm for its channel length and the channel width.

Explanation of Solution

Given Information:

Fabricating a capacitor, utilizing the gate metallization and the substrate as the capacitor electrodes.

  1pF of capacitance.

Oxide thickness ranging from 2nm to 10nm .

Square plate capacitor of 10pF .

Initially determining the oxide capacitance which is the quotient of permittivity of silicon dioxide and oxide thickness of 2nm :

  Cox=ϵoxtox=3.9×ϵotox=3.9×(8.854×1012)2×109=0.01725Fm-2

Calculating the area required per 1pF capacitance using the formula:

  C=Cox×W×L

Where W×L is the area required, and W is the channel width and L is the channel length.

  A1=CCox=1×10120.01725=57.97μm2

Since it’s a square plate capacitor, the square root of 57.97μm2 will give the channel width and the channel length.

  W=L=5.797×1010=24.08×106m=24.08μm

Determining the oxide capacitance which is the quotient of permittivity of silicon dioxide and oxide thickness of 10nm :

  Cox=ϵoxtox=3.9×ϵotox=3.9×(8.854×1012)10×109=3.45×103Fm2

Calculating the area required per 1pF capacitance using the formula:

  C=Cox×W×L

Where W×L is the area required, and W is the channel width and L is the channel length.

  A2=CC ox= 10 123.45× 10 3=289.86×1012m2A2=289.86μm2

Since it’s a square plate capacitor, the square root of 2.9×109m2 will give the channel width and the channel length.

  W=L=2.9×109=53.85×106m=53.85μm

Conclusion:

Area required per 1pF of capacitance for oxide thickness of 2nm is 5.797×1010m2 , and the dimensions needed for square plate capacitor of 10pF is 24.08μm for its channel length and the channel width.

Area required per 1pF of capacitance for oxide thickness of 10nm is 2.9×109m2 , and the dimensions needed for square plate capacitor of 10pF is 53.85μm for its channel length and the channel width.

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Chapter 5 Solutions

Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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