Engineering Electromagnetics
Engineering Electromagnetics
9th Edition
ISBN: 9781260029963
Author: Hayt
Publisher: MCG
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Chapter 4, Problem 4.28P
To determine

The difference in potential between points at θa and θb . Also, state the condition at which the obtained answer will agree with V=Qdcosθ4πε0r2γ>>d for the potential θa.

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Question 2 A transistor is used as a switch and the waveforms are shown in Figure 2. The parameters are Vcc = 225 V, VBE(sat) = 3 V, IB = 8 A, VCE(sat) = 2 V, Ics = 90 A, td = 0.5 µs, tr = 1 µs, ts = 3 µs, tƒ = 2 μs, and f 10 kHz. The duty cycle is k 50%. The collector- emitter leakage current is ICEO = 2 mA. Determine the power loss due to the collector current: = = = (a) during turn-on ton = td + tr VCE Vcc (b) during conduction period tn V CE(sat) 0 toff" ton Ics 0.9 Ics (c) during turn-off toff = ts + tf (d) during off-time tot (e) the total average power losses PT ICEO 0 IBS 0 Figure 2 V BE(sat) 0 主 * td tr In Is If to iB VBE T= 1/fs
Question 1: The beta (B) of the bipolar transistor shown in Figure 1 varies from 12 to 60. The load resistance is Rc = 5. The dc supply voltage is VCC = 40 V and the input voltage to the base circuit is VB = 5 V. If VCE(sat) = 1.2 V, VBE(sat) = 1.6 V, and RB = 0.8 2, calculate: (a) the overdrive factor ODF. (b) the forced ẞ (c) the power loss in the transistor PT. IB VB RB + V BE RC Vcc' Ic + IE Figure 1 VCE
I need help in creating a matlab code to find the currents

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Engineering Electromagnetics

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