EBK CONCEPTS OF DATABASE MANAGEMENT
EBK CONCEPTS OF DATABASE MANAGEMENT
8th Edition
ISBN: 8220100706004
Author: Last
Publisher: Cengage Learning US
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Chapter 4, Problem 13TDE
To determine

To determine the changes needed in database to add items in category CRV to item table. Addition of any integrity constraints to the Storehouse and Price field in the Item table is required or not.

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6.4 (a) A sample of semiconductor has a cross-sectional area of 1 cm² and a thickness of 0.1 cm. Determine the number of electron-hole pairs that are generated per unit volume per unit time by the uniform absorption of 1 watt of light at a wavelength of 6300 Å. Assume each photon creates one electron-hole pair. (b) If the excess minority carrier lifetime is 10 μs, what is the steady-state excess carrier concentration?
6.1 Consider silicon at 7 = 300 K that is doped with donor impurity atoms to a concentra- tion of Na = 5 x 105 cm³. The excess carrier lifetime is 2 x 10-'s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that Sn = p = 104 cm³. What is the recombination rate of holes for this condition?
6.18 A semiconductor is uniformly doped with 107 cm³ acceptor atoms and has the fol- lowing properties: D = 27 cm²/s, D = 12 cm²/s, T = 5 × 10-7 s, and 7po = 10-7 s. An external source has been turned on for 1 <0 producing a uniform concentration of excess carriers at a generation rate of g = 10 cm³ s. The source turns off at time 1 = 0 and back on at time = 2 × 10-6 s. (a) Derive the expressions for the excess carrier concentration as a function of time for 01, (b) Determine the value of excess carrier concentration at (i) 1 = 0, (ii) 1 = 2 × 10-6 s, and (iii) t = x. (c) Plot the excess carrier concentration as a function of time.
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