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6.19 Consider a bar of p-type silicon that is uniformly doped to a value of N = 2 x 101 cm³ at 7=300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is 8p(0) = Sn(0) = 2 x 104 cm³. Assume the following Light p type x=0 Figure P6.19 | Figure for Problems 6.19 and 6.21. parameters: μ = 1200 cm²/V-s, μp = 400 cm²/V-s, T = 10-6 s, and 7p = 5 × 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

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Chapter 4, Problem 10RQ

To determine

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6.19 Consider a bar of p-type silicon that is uniformly doped to a value of N = 2 x 101 cm³ at 7=300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is 8p(0) = Sn(0) = 2 x 104 cm³. Assume the following Light p type x=0 Figure P6.19 | Figure for Problems 6.19 and 6.21. parameters: μ = 1200 cm²/V-s, μp = 400 cm²/V-s, T = 10-6 s, and 7p = 5 × 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

*6.24 Consider the semiconductor described in Problem 6.19. Assume a constant electric field E, is applied in the +x direction. (a) Derive the expression for the steady-state excess electron concentration. (Assume the solution is of the form ea.) (b) Plot on versus x for (i) Eo = 0 and (ii) E₁ = 12 V/cm. (c) Explain the general characteristics of the two curves plotted in part (b).

6.6 Consider a one-dimensional hole flux as shown in Figure 6.4. If the generation rate of holes in this differential volume is gp = 100 cm³-s¹ and the recombination rate is 2 × 1019 cm³-s, what must be the gradient in the particle current density to maintain a steady-state hole concentration?