Give Lewis dot structures and sketch the shapes of the following: a. SQF 6 (one F is attached to O) b. POF 3 c. ClO 2 d. NO 2 e. S2O 4 2 − (symmetric, with an S — S bond) f. N 2 H 4 (symmetric, with an N — N bond) g. ClOF 2 + h. CS 2 i. XeOF 5 −
Give Lewis dot structures and sketch the shapes of the following: a. SQF 6 (one F is attached to O) b. POF 3 c. ClO 2 d. NO 2 e. S2O 4 2 − (symmetric, with an S — S bond) f. N 2 H 4 (symmetric, with an N — N bond) g. ClOF 2 + h. CS 2 i. XeOF 5 −
Solution Summary: The author explains how the Lewis dot structure and shape of SOF_6 should be determined.
Give Lewis dot structures and sketch the shapes of the following: a.
SQF
6
(one F is attached to O) b.
POF
3
c.
ClO
2
d.
NO
2
e.
S2O
4
2
−
(symmetric, with an
S
—
S
bond) f.
N
2
H
4
(symmetric, with an
N
—
N
bond) g.
ClOF
2
+
h.
CS
2
i.
XeOF
5
−
If we assume a system with an anodic overpotential, the variation of n as a function
of current density:
1. at low fields is linear 2. at higher fields, it follows Tafel's law
Obtain the range of current densities for which the overpotential has the same value
when calculated for 1 and 2 cases (maximum relative difference of 5% compared to
the behavior for higher fields).
To which overpotential range does this correspond?
Data: i = 1.5 mA cm², T = 300°C, B = 0.64, R = 8.314 J K1 mol-1 and F = 96485 C mol-1.
Answer by equation please
Some of the theories used to describe interface structure can be distinguished by:1. the measured potential difference.2. the distribution of ions in solution.3. the calculation of charge density.4. the external Helmoltz plane.
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Author:Steven D. Gammon, Ebbing, Darrell Ebbing, Steven D., Darrell; Gammon, Darrell Ebbing; Steven D. Gammon, Darrell D.; Gammon, Ebbing; Steven D. Gammon; Darrell
Author:Steven D. Gammon, Ebbing, Darrell Ebbing, Steven D., Darrell; Gammon, Darrell Ebbing; Steven D. Gammon, Darrell D.; Gammon, Ebbing; Steven D. Gammon; Darrell