EBK MANUFACTURING ENGINEERING & TECHNOL
7th Edition
ISBN: 9780100793439
Author: KALPAKJIAN
Publisher: YUZU
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Textbook Question
Chapter 29, Problem 17QLP
What is the difference between chemically reactive ion etching and dry-plasma etching?
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Chapter 29 Solutions
EBK MANUFACTURING ENGINEERING & TECHNOL
Ch. 29 - Define MEMS, SIMPLE, SCREAM, and HEXSIL.Ch. 29 - Give three examples of common...Ch. 29 - Why is silicon often used with MEMS devices?Ch. 29 - Describe bulk and surface micromachining.Ch. 29 - What is the purpose of a spacer layer in...Ch. 29 - What is the main limitation to successful...Ch. 29 - What are common applications for MEMS andMEMS...Ch. 29 - Prob. 8RQCh. 29 - Prob. 9RQCh. 29 - Explain the differences between stereolithography...
Ch. 29 - What is MolTun? What are its main advantages?Ch. 29 - What is HEXSIL?Ch. 29 - What do SIMPLE and SCREAM stand for?Ch. 29 - Describe the difference between isotropic etching...Ch. 29 - Lithography produces projected shapes, so true...Ch. 29 - Which process or processes in this chapter allow...Ch. 29 - What is the difference between chemically reactive...Ch. 29 - The MEMS devices discussed in this chapter are...Ch. 29 - Explain how you would produce a spur gear if...Ch. 29 - Prob. 20QLPCh. 29 - Prob. 21QLPCh. 29 - Prob. 22QLPCh. 29 - Is there an advantage to using the MolTun process...Ch. 29 - The atomic-force microscope probe shown inFig....Ch. 29 - Estimate the natural frequency of the cantilever...Ch. 29 - Using data from Chapter 28, derive the time needed...Ch. 29 - It is desired to produce a 500 m by 500...Ch. 29 - If the Reynolds number for water flow through a...Ch. 29 - Prob. 30SDPCh. 29 - Prob. 31SDPCh. 29 - Prob. 32SDPCh. 29 - Design a micromachine or device that allows the...Ch. 29 - Conduct a literature search and determine the...Ch. 29 - Perform a literature search and write a...
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- Describe the potential applications of 8D printing in aerospace engineering and materials science.arrow_forwardDiscuss the importance of microchip manufacturing processes such as photolithography and etching in producing advanced microchips.arrow_forwardExplain the concept of "nanoimprint lithography" in nanoscale printing technology and its applications in advanced materials research.arrow_forward
- please explain FDM, M,J MJF, SLS (3D plastic printing technology) working principlearrow_forwardCompare the methods of vacuum thermal evaporation and vacuum sputtering in terms of technical realization (similarities, differences), advantages, and disadvantages.arrow_forwardExplain with neat sketch of “Etching” the surface finishing process.( Minimum 1 and half pages including diagram.) (Manufacturing Process)arrow_forward
- Write in detail following terminologies according to wafer fabrication processes: a. Diffusion and Ion Implantation b. Metallization c. Etchingarrow_forwardBased on the table below, which of the statements below is/are correct regarding the 3D printing process shown in the schematic? a.You can produce a room-temperature non-fragile 225C oven-safe food container with at least one material from the above table using this process and a 280C nozzle b.You can use this process to print plastic or brittle objects but not elastomers and rubbers c.Manufacturing a thermoplastic HDPE hose with an extrusion nozzle heated to 175C is possible with this process d.You can print thermoplastic and thermoset polymers with this process, you only need to make sure that the nozzle specs and the crosslinking conditions match the polymer requirements e.This process is best suited for the low volume production of tubes, bars and beams due to the nature of the extrusion processarrow_forwardRj gandhiarrow_forward
- All of the followings are characteristics of amorphous Thin film except Lower efficiency of conversion Most expensive type Highly affected by temperature changes Flexibility of the modulearrow_forward4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si I photoresist 0.5 umarrow_forwardWhy does shrinkage occur in 3D FDM printing? Explain 2 approaches to reduce shrinkage for a given component geometryarrow_forward
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