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(a)
The
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Answer to Problem 14.13P
The value of electric field
Explanation of Solution
Given:
The following information is given:
The radiation field
Calculation:
Using the condition
Conclusion:
The value of electric field
(b)
The
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Answer to Problem 14.13P
The value of electric field
Explanation of Solution
Given:
The vertical current element location is
Concept Used:
Due to the change in the position of the vertical current element, there will be practically no change in the distance of P. However, this will enforce a change in the phase term which needs to be included in the overall electric field expression.
Calculation:
Consider two lines are drawn. One line is drawn from the origin to the point
The overall electric field will be obtained by using the modified result obtained in part (a) with the phase factor due to the path difference. The electric field will be,
Conclusion:
The value of electric field
(c)
The
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Answer to Problem 14.13P
The value of electric field
Explanation of Solution
Given:
The radiation field
Identical vertical elements are located at
Concept Used:
Due to the presence of the element at
Overall electric field can be found by adding the contribution of
Calculation:
Since the phase angle of
Therefore, overall electric field will be,
Conclusion:
The value of electric field
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Chapter 14 Solutions
Engineering Electromagnetics
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- For a enahnced-type NMOS transistor with V₁=+1V and kn'(w/L)= 2 mA/V2, find the minimum VDs required to operate in the saturation region when VGS=+2 V. What is the corresponding value of ID?arrow_forward. Using Properties to find the Z-Transform including the region of convergence for x(n) = n (2)" cos(0.2π(n − 2))u(n − 1) - -arrow_forwardJ VDD M₁ In the circuit of figure shown below, determine the region of operation of M₁as Vigoes from VDD.to zero. (You may want to draw a plot or just explain by the range, remember the transistor is a PMOS) Assume VDD = 2.5 V and | VTH | = 0.4V. 5 + 1 Varrow_forward
- We wish to design the circuit of the figure shown below for a drain current of 1 mA (l=1mA). If W/L = 18/0.18, compute R1 and R2 such that the input impedance is at least 20 k. R₁ VDD = 1.8 V 500 Ω M₁ R₂arrow_forwardIn the figure shown below, what is the minimum allowable value of VDD if M₁ must not enter the triode region? Assume λ=0 (use ideal current formula that is not dependent on VDs) 1 V + RD VDD = 1.8 V T M 500 Ω 1 W 10 L = 0.18arrow_forwardCalculate the total charge stored in the channel of an NMOS device if Cox=10fF/um², w=10 µm, L=0.1 μm, and VGS-VTH=1 V. Assume VDs=0. (means there is no movement of electrons, all of them are piled up in the channel, we want to calculate the magnitude of electron charge |Q|)arrow_forward
- The first photo is question 1arrow_forwarda) Write down the order of the transfer function in each of the following cases. Assume that there are no terms in the numerator that will cancel terms in the denominator. 10 H(s) H(s) = s+1 5 (s+3)(s—. 4) 4s1 5 H(s) = H(s) - 83 +1 s27s 6 H(s) H(s) = s(s²+4s) 2s27s+1 84583882 +3s+2 H(s) 83 +8 s+1 = H(s) s34s26s+5 s52s4383 + 4s2 +5s +6arrow_forwardQuestion 5 ( A system is found to have zeros of -3 and poles of 4, and -2. The system also has a gain of 4. Write out the corresponding transfer function. Question 6. A system has a transfer function of What is the gain, K, of the system? Question 7 ( A system has a transfer function of H(s) - 4 8+5 H(s): = 4 8 +5 A step input of size 3 is applied to the system at time zero (Since we're dealing with transfer functions, x(0) is also zero at time zero). a) [10] What is the response ✗(s) of the system? b) [10] Derive the time dependent solution, x(t), of this responsearrow_forward
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