If the photon of red light with frequency of 4.29 × 10 14 Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

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Answer 1

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Chapter 12, Problem 67E

Interpretation Introduction

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

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Answer 2

Question

Chapter 12, Problem 67E

Interpretation Introduction

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

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Answer 3

Question

Chapter 12, Problem 67E

Interpretation Introduction

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

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Answer 4

Question

Chapter 12, Problem 67E

Interpretation Introduction

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

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Answer 5

Chapter 12, Problem 67E

Interpretation Introduction

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

Answer 6

Chapter 12, Problem 67E

Interpretation Introduction

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

Answer 7

Chapter 12, Problem 67E

Interpretation Introduction

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

Answer 8

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Answer 9

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Answer 10

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Answer 11

Ch. 12 - What is graphene? Why is graphene unique?Ch. 12 - Prob. 2E Ch. 12 - What is a crystalline lattice? How is the lattice...Ch. 12 - Prob. 4E Ch. 12 - Prob. 5E Ch. 12 - What is the difference between hexagonal closest...Ch. 12 - What are the three basic types of solids and the...Ch. 12 - Prob. 8E Ch. 12 - What kinds of forces hold each of the three basic...Ch. 12 - Prob. 10E

If the photon of red light with frequency of 4.29 × 10 14 Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

Solution Summary: The author explains that if the energy of the photon of incident light is equal to the band gap energy, the promotion of electron from valance band to conduction band is not possible.

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

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Chapter 12 Solutions

If the photon of red light with frequency of 4.29 × 10 14 Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

Solution Summary: The author explains that if the energy of the photon of incident light is equal to the band gap energy, the promotion of electron from valance band to conduction band is not possible.

To determine: If the photon of red light with frequency of 4.29 × 1014 Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.

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Chapter 12 Solutions

To determine: If the photon of red light with frequency of 4.29 × 10¹⁴ Hz have sufficient energy to promote an electron from the valance band to the conduction band in a sample of silicon. The band gap in silicon is 1.11eV.