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Why, in general, is the concentration of excess carriers less at the surface of a semiconductor than in the bulk? (3) When a concentration of one type of excess carrier is suddenly created in a semiconductor, what is the mechanism by which the net charge density quickly becomes zero?

Why, in general, is the concentration of excess carriers less at the surface of a semiconductor than in the bulk? (3) When a concentration of one type of excess carrier is suddenly created in a semiconductor, what is the mechanism by which the net charge density quickly becomes zero?

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Why, in general, is the concentration of excess carriers less at the surface of a semiconductor than in the bulk? 3. When a concentration of one type of excess carrier is suddenly created in a semiconductor, what is the mechanism by which the net charge density quickly becomes zero? 4. What is the time dependence of the density of excess carriers when the generation rate becomes zero?
Transcribed Image Text:Why, in general, is the concentration of excess carriers less at the surface of a semiconductor than in the bulk? 3. When a concentration of one type of excess carrier is suddenly created in a semiconductor, what is the mechanism by which the net charge density quickly becomes zero? 4. What is the time dependence of the density of excess carriers when the generation rate becomes zero?
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