Why, in general, is the concentration of excess carriers less at the surface of a semiconductor than in the bulk? (3) When a concentration of one type of excess carrier is suddenly created in a semiconductor, what is the mechanism by which the net charge density quickly becomes zero?
Why, in general, is the concentration of excess carriers less at the surface of a semiconductor than in the bulk? (3) When a concentration of one type of excess carrier is suddenly created in a semiconductor, what is the mechanism by which the net charge density quickly becomes zero?
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