What is the current density in a copper wire with a radius of 1 mm and carrying a current of 1 mA? What is the drift speed of the electrons carrying this current? Data:                               ρcopper = 8.96x103 1 mole of copper = 6.02x1023 atoms Molar mass = 63.54g qe = 1.602x10-19 C or A * S

Q: In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron…

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Q: Estimate the resistivity of a Si sample doped with phosphorus to a concentration of 10 ^ 15 * c * m…

A: When Silicon is doped with phosphorus the majority of the charge carrier are electrons which means…

Q: The thermal equilibrium concentration of the p0 hole in silicon at T =300K is 10 ^ 15 cm ^ 3. What…

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Q: give some specific applications of liquid crystal in the field of electronics. asap fast within 5…

A: Give some specific applications of liquid crystals in the field of electronics.

Q: Exhibits no energy gap between the valence and conduction ?

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Q: If you know that the mobility of electrons is 1350cm?/v and the mobility of holes is 450cm?/v for a…

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Q: Assuming silicon with completely ionized dopants, compute n and p for the following case.

A: Given Data:Required Data: Here, we need to determine the electron and hole concentration. Here,…

Q: Find the value of the resistor R since Vr = 50 mv since the diodes are identical.

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Q: 1 300° k, if the conductivity is onductivity of 0.1l per ohm per D0 cm2/v-s, and for Silicon

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Q: Consider a palladium Schottky diode at T = 300 K formed on n-type germanium doped at N = 5 X 1018…

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Q: The carrier mobility differs between electrons and holes. In silicon, the difference is: Hole…

A: The carrier mobility differs between electrons and holes. In silicon, the difference is:

Q: q= 1.6×10-19 un = Hp = ni = C 1350 cm²/Vs 480 cm²/Vs V₂ = V: 1.5×1010 1.5×1010 /cm³ 26 mV

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Q: In register indexed addressing mode, the - effective address is given by the sum of the index…

A: Here the multiple questions are posted as a single request.we will answer the first question.If you…

Q: Compute the mobility of the free clectrons in aluminum (AL) for which the density is 2.70 x 10'…

A: According to the question we have to find the value of mobility.

Q: (a) What is the forward voltage of a diode operating at a current of 48.6 A at 300 K if IS =10−15 A?…

A: Given data: ID is: 48.6 A Is is: 10-15 A k = 38×10-23 J/K q = 6×10-19 C   The expression for the…

Q: -3 -3 9. Silicon at T = 450 K is doped with 1.5 10¹5 cm³ boron and 8 10¹4 cm*³ arsenic. a. Is this…

A: It is given that: T=450 KDonor(arsenic) concentration=ND=8×1014 cm-3Acceptor(boron)…

Q: In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron…

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Q: Copper has a conductivity of 6.45 x10' 1/ohm.m at 0°C. If an copper alloy is made containing 1.12%…

A: ρpure=1conductivity of coper         =16.45×107ρpure=1.55×10-8ohm.m

Q: In a parallel-plate diode, the anode is at 240V with respect to the cathode which is 5mm away from…

A: The electron is accelerated between the parallel plate diode. The electric field across the plate is…

Q: A material that has 4valence electrons (A) crystal B conductor insulator D semiconductor

A: VALENCE  ELECTRONS : The electrons in the last orbit which also determines mainly the electrical…

Q: The intrinsic electron density in Silicon (Eg = 1.12eV) at a temperature of 295K is 1x10 16m-3. What…

A: Given that intrinsic electron density of Silicon at 295K is 1016 m-3  And it's band gap energy Eg =…

Q: The energy band in which free electrons exist is the first band O valence band O conduction band O…

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Q: Question 4 If a pure ("intrìnsic") semiconductor material is heated, the thermal energy liberates…

A: In pure intrinsic semiconductor, the concentration of electrons is equals to concentration of holes.…

Q: İNGİLİZCE TÜRKÇE RUSÇA An example of an elongated p-type semiconductor material: please choose one:…

A: When an intrinsic semiconductor is doped with pentavalent impurity then it becomes P type…

Q: Q1 The electron density in pure silicon is 1.45x1016m-3 at 300°K. Find the electron density when the…

A: In a pure semiconductor, the electron and hole density will be the same. This concentration is…

Q: Silicon is doped with 5 × 1016 Phosphorus atom. i. Determine whether the material is n-type or…

A: Here the Silicon atom is doped with 5 X 1016  phosphorous atom. Since phosphorous atoms have 5…

Q: In silicon, the thermal height of the electron at T = 300k is n0 = 5x10 ^ 4cc. What is the hole high…

A: Given data no= 5 * 104 cm-3 For silicon n1= 1.5 * 1010 cm-3

Q: Suppose a semiconductor has ND=1016/cm3, NA = 5×1016/cm3, and ni =1011/cm3. What are the electron…

A: Given:  NA =5×1016 cm3 ND =1016 cm3 ni =1011 cm3

Q: The thermal equilibrum concentration of the electron at T=300K in silicon is n0=5*10^4cc. What is…

A: The solution can be achieved as follows.

Q: Please calculate the percentage of effects of electrons to conductivity of Silicon, which is 6…

A: Given ue = 0,19m²/V.sn and up = 0,0425 m²/V.sn

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.