Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 420 K. You may use the values of effective mass m,* = 1.04mg, mn = 1.09mo, where m, is the mass of a free electron and the band gap energy value E, 1.12 eV. THEORY The conductivity of a semiconductor material can be expressed by = q(nun + PHp), (1) where q is the elementary charge, n the number density of conduction electrons, ln the mobility of conduction electrons, p the number density of holes, and u, the mobility of holes. For an undoped semiconductor, the conductivity is determined by the intrinsic concentration of
Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 420 K. You may use the values of effective mass m,* = 1.04mg, mn = 1.09mo, where m, is the mass of a free electron and the band gap energy value E, 1.12 eV. THEORY The conductivity of a semiconductor material can be expressed by = q(nun + PHp), (1) where q is the elementary charge, n the number density of conduction electrons, ln the mobility of conduction electrons, p the number density of holes, and u, the mobility of holes. For an undoped semiconductor, the conductivity is determined by the intrinsic concentration of
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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