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thick. The insulator above the floating gate has a dielectric constant of 8 and is 100 nm thick. If the curren density J1=GE1 where o= shift for a sufficiently long time that J1 becomes negligibly small. The applied voltage on the control gate i 10 S/cm, and the current in the upper insulator is zero, find the threshold voltag 7.5 V.

thick. The insulator above the floating gate has a dielectric constant of 8 and is 100 nm thick. If the curren density J1=GE1 where o= shift for a sufficiently long time that J1 becomes negligibly small. The applied voltage on the control gate i 10 S/cm, and the current in the upper insulator is zero, find the threshold voltag 7.5 V.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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For a floating-gate nonvolatile memory device, the lower insulator has a dielectric constant of 4 and is 8 nm thick. The insulator above the floating gate has a dielectric constant of 8 and is 100 nm thick. If the current density J1=oE, where o= shift for a sufficiently long time that Ji becomes negligibly small. The applied voltage on the control gate is 10' S/cm, and the current in the upper insulator is zero, find the threshold voltage 7.5 V.
Transcribed Image Text:For a floating-gate nonvolatile memory device, the lower insulator has a dielectric constant of 4 and is 8 nm thick. The insulator above the floating gate has a dielectric constant of 8 and is 100 nm thick. If the current density J1=oE, where o= shift for a sufficiently long time that Ji becomes negligibly small. The applied voltage on the control gate is 10' S/cm, and the current in the upper insulator is zero, find the threshold voltage 7.5 V.
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