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The rod initially has a mass of 1,460g, and the mole fraction of H, in the exit gas is 0.223. The mole fraction of H, in the feed to the reactor is 0.580, and the feed enters at the rate of 6.22 kg mol/hr. What will be the mass of the rod at the end of 20 minutes? H2(g) + SIHCI3(g) → Si(s) + 3HCI(g) 1200° C Gas HCI Gas Rod SIHCI, H2 SIHCI, H2

The rod initially has a mass of 1,460g, and the mole fraction of H, in the exit gas is 0.223. The mole fraction of H, in the feed to the reactor is 0.580, and the feed enters at the rate of 6.22 kg mol/hr. What will be the mass of the rod at the end of 20 minutes? H2(g) + SIHCI3(g) → Si(s) + 3HCI(g) 1200° C Gas HCI Gas Rod SIHCI, H2 SIHCI, H2

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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One of the most common commercial methods for the production of pure silicon that is to be used for the manufacture of semiconductòrs is the Siemens process (see Fig- ure P10.2) of chemical vapor deposition (CVD). A chamber contains a heated silicon rod, and a mixture of high purity trichlorosilane mixed with high purity hydrogen that is passed over the rod. Pure silicon (EGS-electronic grade silicon) deposits on the rod as a polycrystalline solid. (Single crystals of Si are later made by subsequently melt- ing the EGS and drawing a single crystal from the melt.) The reaction is: H2(g) + SIHCI;(g) — Si(s) + 3НCІ(g). The rod initially has a mass of 1,460g, and the mole fraction of H, in the exit gas is 0.223. The mole fraction of H, in the feed to the reactor is 0.580, and the feed enters at the rate of 6.22 kg mol/hr. What will be the mass of the rod at the end of 20 minutes? Ha(g) + SIHCI (g) → Si(s) + 3HCI(g) 1200° C Gas Gas Rod SİHCI, H2 HCI SIHCI, H2 Figure P10.2
Transcribed Image Text:One of the most common commercial methods for the production of pure silicon that is to be used for the manufacture of semiconductòrs is the Siemens process (see Fig- ure P10.2) of chemical vapor deposition (CVD). A chamber contains a heated silicon rod, and a mixture of high purity trichlorosilane mixed with high purity hydrogen that is passed over the rod. Pure silicon (EGS-electronic grade silicon) deposits on the rod as a polycrystalline solid. (Single crystals of Si are later made by subsequently melt- ing the EGS and drawing a single crystal from the melt.) The reaction is: H2(g) + SIHCI;(g) — Si(s) + 3НCІ(g). The rod initially has a mass of 1,460g, and the mole fraction of H, in the exit gas is 0.223. The mole fraction of H, in the feed to the reactor is 0.580, and the feed enters at the rate of 6.22 kg mol/hr. What will be the mass of the rod at the end of 20 minutes? Ha(g) + SIHCI (g) → Si(s) + 3HCI(g) 1200° C Gas Gas Rod SİHCI, H2 HCI SIHCI, H2 Figure P10.2
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