The pure silicon mold given on the side is doped with 10 ^ 18cm ^ -3 phosphorus atoms. When the electrical field is applied to the silicon mold, the resulting flux density is 500A / cm ^ 2. The resistance of the silicon cup was measured as 50 ohms. The ability to move electrons is 1200cm ^ 2 / etc. The ability to characterize holes is 400cm ^ 2 / etc. accordingly, what is the length of the silicon container.

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The pure silicon mold given on the side is doped with 10 ^ 18cm ^ -3 phosphorus atoms. When the electrical field is applied to the silicon mold, the resulting flux density is 500A / cm ^ 2. The resistance of the silicon cup was measured as 50 ohms. The ability to move electrons is 1200cm ^ 2 / etc. The ability to characterize holes is 400cm ^ 2 / etc. accordingly, what is the length of the silicon container.

Doğru seçenek hangisidir.
Yan tarafta verilen saf silikon kalıp, 1018cm3 Fosfor atomu ile
katkılanmaktadır.
20µm
Silikon
kalıba
elektriksel
alan
uygulandığında oluşan toplam akı yoğunluğu 500 A/cm2' dir.
Silikon kalıbın direnci de 50 olarak ölçülmüştür. Elektron
hareket etme yeteneği 1200 cm?/V.s, deliklerin hareket etme
yeteneği ise 400 cm2/V.s'dir. Buna göre
50µm
L
Silikon kalıbın uzunluğu kaç um'dir?
Si için;
E̟(eV) = 1.1
E =1.035 *1012(F/ cm)
B(cm*K2) = 5.23 *10'5
-3/2
q = 1.6 *10-19
k = 86 *10 eV |K
n; =
1.5 x 1010 / cm
V, = 0.025V
Transcribed Image Text:Doğru seçenek hangisidir. Yan tarafta verilen saf silikon kalıp, 1018cm3 Fosfor atomu ile katkılanmaktadır. 20µm Silikon kalıba elektriksel alan uygulandığında oluşan toplam akı yoğunluğu 500 A/cm2' dir. Silikon kalıbın direnci de 50 olarak ölçülmüştür. Elektron hareket etme yeteneği 1200 cm?/V.s, deliklerin hareket etme yeteneği ise 400 cm2/V.s'dir. Buna göre 50µm L Silikon kalıbın uzunluğu kaç um'dir? Si için; E̟(eV) = 1.1 E =1.035 *1012(F/ cm) B(cm*K2) = 5.23 *10'5 -3/2 q = 1.6 *10-19 k = 86 *10 eV |K n; = 1.5 x 1010 / cm V, = 0.025V
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