The parameters of MOSFET circuit shown in Fig. 2(c) are, kn = 4 mA/V², Vrn = 1.5 V and Va = co V. (i) Design the circuit such that Ipo = 1.0 mA and R = 20 kM. (ii) Calculate the output resistance of the amplifier, Ro. +10V Rsi = 5kn ww Cc Ro Ca Oa + 0어 Rs= 1.5 kn R= 5 kn - 10V ww

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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The parameters of MOSFET circuit shown in Fig. 2(c) are, k, = 4 mA/V², VrN = 1.5 V and V = ∞ V.
(i) Design the circuit such that Ipo = 1.0 mA and R = 20 kN.
(ii) Calculate the output resistance of the amplifier, Ro.
P+10V
R1
Rsi =
5 kn
Ro
ww
Vs
O+vo
R2
Rs =
1.5 kn
R=
5 kn
3 - 10V
ww
ww
Transcribed Image Text:The parameters of MOSFET circuit shown in Fig. 2(c) are, k, = 4 mA/V², VrN = 1.5 V and V = ∞ V. (i) Design the circuit such that Ipo = 1.0 mA and R = 20 kN. (ii) Calculate the output resistance of the amplifier, Ro. P+10V R1 Rsi = 5 kn Ro ww Vs O+vo R2 Rs = 1.5 kn R= 5 kn 3 - 10V ww ww
(b) For
the circuit shown in Figure Fig. 2(b),
the
MOSFET
parameters
are: VTN = 1.2 V,
K, = 0.25 mA/V² and 1 = 0.
(i) Design the circuit such that Ipo = 0.5 mA and Vpso = 3.0 V
(ii) Determine the small-signal voltage gain A, = vo/vi
Q +2V
Rp
Ccz
o+ vo
R=
10 kN
RG=
200kN
v
Rs
Cs
- 10V 6
Transcribed Image Text:(b) For the circuit shown in Figure Fig. 2(b), the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 1 = 0. (i) Design the circuit such that Ipo = 0.5 mA and Vpso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi Q +2V Rp Ccz o+ vo R= 10 kN RG= 200kN v Rs Cs - 10V 6
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