The parabolic rate coefficient at 1200 °C wet oxidation is 0.920 μm²/hr. If it took 120 minutes to grow the initial oxide, for how long (in hours) should the wafer be subjected to another oxidation process to grow an 25000 Aº thick oxide?
The parabolic rate coefficient at 1200 °C wet oxidation is 0.920 μm²/hr. If it took 120 minutes to grow the initial oxide, for how long (in hours) should the wafer be subjected to another oxidation process to grow an 25000 Aº thick oxide?
Chapter23: Voltammetry
Section: Chapter Questions
Problem 23.14QAP
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