The NMOS transistor has KP-50 μA/V², Vto-2 V, L=10 μm, and W=400 μm. Find the midband voltage gain, input resistance, and output resistance of the amplifier. Then, assuming that the input source is given by v(t)=100 sin(2000nt) mV compute the output voltage. Also, assume that the frequency of the source (which is 1000 Hz) is in the midband region. v(1) R www 100 ΚΩ o C₁ HE 0.01 με +20 V ΙΜΩ R₁ • 3 ΜΩ R₂ Rs 2.7 ΚΩ +20 V RD 4.7 ΚΩ C₂ H 1 MF + Vo Cs 100 μF RL 10 ΚΩ

The NMOS transistor has KP-50 μA/V², Vto-2 V, L=10 μm, and W=400 μm. Find the midband voltage gain, input resistance, and output resistance of the amplifier. Then, assuming that the input source is given by v(t)=100 sin(2000nt) mV compute the output voltage. Also, assume that the frequency of the source (which is 1000 Hz) is in the midband region. v(1) R www 100 ΚΩ o C₁ HE 0.01 με +20 V ΙΜΩ R₁ • 3 ΜΩ R₂ Rs 2.7 ΚΩ +20 V RD 4.7 ΚΩ C₂ H 1 MF + Vo Cs 100 μF RL 10 ΚΩ

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

/ Design a circuit using an n-channel E-MOSFET with the following datasheet specifications: Ixon) = 500 mA at VGS 10 V and VGS(h) = 1 V. Use a (+12 V) dc supply voltage with voltage divider bias. The voltage at the drain with respect to ground is to be (+7.78 V), the voltage at the source with respect to the ground is to be (+2.1 V), and the maximum current from the supply is to be 21.1 mA.
Figure Q3 shows a common-source amplifier that has transistor parameters Kn’=40μA/V2, W/L=40, VTN=0.4V, and λ=0.02V-1. State all assumptions made. i. Determine IDQ and VDSQii. Sketch the small signal analysis and determine the small signal voltage gain, Av.
Question 7) Design a JFET amplifier network with ldss-8 mA, Ve=-4 V, R1=110 MN, R2=10 MQ. When an input AC signal V=10 mV is applied to the network, an output signal Vo=2V AC is obtained. (suppose that ra2 10R0) a) Draw the JFET amplifier network you prefer to design, and explain why you choose this network b) Explain the aims and reasons in using of all the peripheral components handled on your network c) Draw AC equivalent re model of the network (5p.) d) Draw transfer characteristic curve and derive lda and Vasa values from the characteristic curve e) Calculate Av, gm, VoD, Ro, Rs, Z; and Zn. Note: Please, do not forget using resistors and capacitors as peripheral elements whatever required for your complete design in the question (i.e. input, output terminals etc.)
Q.3 Figure Q.3 shows an AC equivalent circuit at high frequency for a common-emitter BJT amplifier circuit. The voltage gain, Ay is -40. 1502 4 pF + Em V, RL Vo 3pF 2kΩ 100pF IpF 4pF Figure Q.3: AC equivalent circuit at high frequency operation (а) Determine the high cut-off frequency due to the input side of the equivalent circuit, fHi- (b) Consider that the high cut-off frequency due to the output side of the equivalent circuit, fHo, is 80 MHz. State the dominant high cut-off frequency.
4) Consider the amplifier shown below with its corresponding small signal model. Using the provided small signal model, perform small signal analysis to determine expressions the you would need to determine Av(s). Do NOT solve for Av(s), just provide the expressions that you would need to determine Av(s). Show your work! Do NOT make any approximations. Vin Cf Vcc WWW R Vo CL Vin W R1 Cf + Vberπ ww R gm Vbe W ro Vo CL
Please Answer the following: In the circuit shown, if the transistor has V, = 1.1 V, kn = 1.3 mA/V², and Ip= 1 mA. Find gm and r. if VA = 60 V. Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. 1. 2. Find Rin and Ro. 3. Find the overall voltage gain vo/Vị. 6 V 250 k2 ovo 500 k2 Vi 1.66 k2 Rin R. 두
An RF amplifier is composed of a cascade of two amplifier devices. The first has a power gain of 190W/W. The second has a power gain of 100W/W. What is the overall power gain of the cascade in dB (to two decimal places)?
Explain the math
Rr mif Ux R₂ For the amplifier circuit shown wwwww VDD Hrr CS Kn = 1mA/V2, Vtn = 0.5V, Vad = 5.0V. wwwwww 1. Draw the small signal AC equivalent circuit. 2. Find the voltage gain vo/v. 2 The component values are RD = 2.0K, Rs = 1.0K, R₂ = 200K, R₁ = 400K, RL = 10K, R = 100. Further, we know that the MOS device is in saturation and V, = 0.4764V. Vo
6. If a 10 mV signal is applied to the base of the emitter-follower circuit in Question 5, the output signal is approximately (a) 100 mV (b) 150 mV (c) 1.5 V (d) 10 mV 7. For a common-emitter amplifier, Rc = 1.0 k2, RE = 390 2, r'.= 15 Q, and Buc = 75. Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is: (a) 66.7 (b) 2.56 (c) 2.47 (d) 75 9. In a certain emitter-follower circuit, the current gain is 50. The power gain is approximately: (c) I (a) 50AV (b) 50 (d) answers (a) and (b) 10. In a Darlington pair configuration, each transistor has an ac beta of 125. If RE is 560 2, the input resistance is: (a) 560 2 (b) 70 k2 (c) 8.75 M2 (d) 140 k2 11. The input resistance of a common-base amplifier is (a) very low (b) very high (c) the same as a CE (d) the same as a CC 12. In a common-emitter amplifier with voltage-divider bias, Rintbase) = 68 k2, R, =33 k2, and R2 =15 k2. The total input resistance is: (a) 68 k2 (b) 8.95 k2 (c) 22.2 k2 (d) 12.3 k2
Which option is correct 5. In a superheterodyne receiver, a varactor diode: a) is placed in series with the tank inductor to provide tracking at the low end of a large frequency band.b) is placed in parallel with each section of the ganged capacitors of the tank to provide tracking at the highend of a large frequency band.c) is placed in an RF amplifier to provide for proper neutralization.d) is placed in a tank circuit to provide for electronic tuning.
Design a common emitter amplifier for a Vout of+-6.3V. Vcc is set to 9V. At x=1, Av=12.6 V/V and the dynamic range from 6.3V to -6.3V. Rout must be less than 100 ohms and Rin must be higher than 100 kohms