The NMOS transistor has KP-50 μA/V², Vto-2 V, L=10 μm, and W=400 μm. Find the midband voltage gain, input resistance, and output resistance of the amplifier. Then, assuming that the input source is given by v(t)=100 sin(2000nt) mV compute the output voltage. Also, assume that the frequency of the source (which is 1000 Hz) is in the midband region. v(1) R www 100 ΚΩ o C₁ HE 0.01 με +20 V ΙΜΩ R₁ • 3 ΜΩ R₂ Rs 2.7 ΚΩ +20 V RD 4.7 ΚΩ C₂ H 1 MF + Vo Cs 100 μF RL 10 ΚΩ

The NMOS transistor has KP-50 μA/V², Vto-2 V, L=10 μm, and W=400 μm. Find the midband voltage gain, input resistance, and output resistance of the amplifier. Then, assuming that the input source is given by v(t)=100 sin(2000nt) mV compute the output voltage. Also, assume that the frequency of the source (which is 1000 Hz) is in the midband region. v(1) R www 100 ΚΩ o C₁ HE 0.01 με +20 V ΙΜΩ R₁ • 3 ΜΩ R₂ Rs 2.7 ΚΩ +20 V RD 4.7 ΚΩ C₂ H 1 MF + Vo Cs 100 μF RL 10 ΚΩ

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

3- A microwave amplifier for cellular applications is being tested for linearity. The input to the amplifier is the sum of two sinusoidal waveforms at the frequencies of 860 MHz and 870 MHz, with an input power spectrum that looks like the figure on the left below. It is determined that the output power spectrum looks like the figure shown on the right (other components are filtered out). a) What is the value of the linear power gain of the amplifier? b) What is the value of the output IP3 for this amplifier? c) What is the value of the input IP3 for this amplifier? d) What is the max linear (fundamental) output power that can be obtained (in each of the two equal amplitude sinusoids) to keep the third order intermodulation products at a power level of 40 dB below the linear output power? e) What is the max. input power than can be used? -50 dBm -25 dBm output input -60 dBm 850 860 870 880 frequency 850 860 870 880 frequency
11. What is the configuration of the given amplifier circuit below?12. How are the coupling capacitors treated in the figure of #11 at AC?
Figure Q3 shows a common-source amplifier that has transistor parameters Kn’=40μA/V2, W/L=40, VTN=0.4V, and λ=0.02V-1. State all assumptions made. i. Determine IDQ and VDSQii. Sketch the small signal analysis and determine the small signal voltage gain, Av.
Question 7) Design a JFET amplifier network with ldss-8 mA, Ve=-4 V, R1=110 MN, R2=10 MQ. When an input AC signal V=10 mV is applied to the network, an output signal Vo=2V AC is obtained. (suppose that ra2 10R0) a) Draw the JFET amplifier network you prefer to design, and explain why you choose this network b) Explain the aims and reasons in using of all the peripheral components handled on your network c) Draw AC equivalent re model of the network (5p.) d) Draw transfer characteristic curve and derive lda and Vasa values from the characteristic curve e) Calculate Av, gm, VoD, Ro, Rs, Z; and Zn. Note: Please, do not forget using resistors and capacitors as peripheral elements whatever required for your complete design in the question (i.e. input, output terminals etc.)
4) Consider the amplifier shown below with its corresponding small signal model. Using the provided small signal model, perform small signal analysis to determine expressions the you would need to determine Av(s). Do NOT solve for Av(s), just provide the expressions that you would need to determine Av(s). Show your work! Do NOT make any approximations. Vin Cf Vcc WWW R Vo CL Vin W R1 Cf + Vberπ ww R gm Vbe W ro Vo CL
Please Answer the following: In the circuit shown, if the transistor has V, = 1.1 V, kn = 1.3 mA/V², and Ip= 1 mA. Find gm and r. if VA = 60 V. Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. 1. 2. Find Rin and Ro. 3. Find the overall voltage gain vo/Vị. 6 V 250 k2 ovo 500 k2 Vi 1.66 k2 Rin R. 두
An RF amplifier is composed of a cascade of two amplifier devices. The first has a power gain of 190W/W. The second has a power gain of 100W/W. What is the overall power gain of the cascade in dB (to two decimal places)?
Figure 2 shows a typical BJT amplifier, with its parasitic capacitances displayed. The current gain of the transistor is B=150 and the voltage gain of the amplifier is Am =-125. The small signal resistances of the transistor are re =16 ohm and r0 = infinity, respectively. The values of resistors and capacitors in the figure are: R1 =80 kohm, R2 =20 Kohm, Rc = 2 Kohm, RE = 2 Kohm, Rs =50 W, RI=5 kohm, Cs=2 uF, Cc=2 uF, Ce =10 uF, Cbc =4 pF, Cbe = 10 pF, Cce =1 pF, Cwi = 4 pF, CWO = 9 pF, and Vcc = 20 V. a) Sketch a simplified circuit diagram of Figure 2 for high frequency analysis. b) Using the concept of "Miller effect capacitance", calculate the input and Output Miller effect capacitances of Figure 2, respectively. C) Determine the upper cut-off frequency of Figure 2 that is imposed by its input network only. d) Explain briefly the possible ways to increase the upper cut-off frequencv of this amplifier.
Explain the math
Vi RB Vcc Rc our A BJT (B=200) is implemented in an amplifier circuit, with a VCC of 15 volts. One wishes to set the Q point at IC = 5.76 mA and VCE = 6.73 volts (DC). Determine RB.
6. If a 10 mV signal is applied to the base of the emitter-follower circuit in Question 5, the output signal is approximately (a) 100 mV (b) 150 mV (c) 1.5 V (d) 10 mV 7. For a common-emitter amplifier, Rc = 1.0 k2, RE = 390 2, r'.= 15 Q, and Buc = 75. Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is: (a) 66.7 (b) 2.56 (c) 2.47 (d) 75 9. In a certain emitter-follower circuit, the current gain is 50. The power gain is approximately: (c) I (a) 50AV (b) 50 (d) answers (a) and (b) 10. In a Darlington pair configuration, each transistor has an ac beta of 125. If RE is 560 2, the input resistance is: (a) 560 2 (b) 70 k2 (c) 8.75 M2 (d) 140 k2 11. The input resistance of a common-base amplifier is (a) very low (b) very high (c) the same as a CE (d) the same as a CC 12. In a common-emitter amplifier with voltage-divider bias, Rintbase) = 68 k2, R, =33 k2, and R2 =15 k2. The total input resistance is: (a) 68 k2 (b) 8.95 k2 (c) 22.2 k2 (d) 12.3 k2
Design a common emitter amplifier for a Vout of+-6.3V. Vcc is set to 9V. At x=1, Av=12.6 V/V and the dynamic range from 6.3V to -6.3V. Rout must be less than 100 ohms and Rin must be higher than 100 kohms