The main feature of photo-detectors made of high energy gap semiconductors is that: O a. They have very small dark current. O b. Their absorption coefficients are quite large. O C. A large number of photons is needed to boost their resulting current. O d. Thin samples are needed for such detectors O e. NON of the given choices is correct.
The main feature of photo-detectors made of high energy gap semiconductors is that: O a. They have very small dark current. O b. Their absorption coefficients are quite large. O C. A large number of photons is needed to boost their resulting current. O d. Thin samples are needed for such detectors O e. NON of the given choices is correct.
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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![The main feature of photo-detectors made of high energy gap semiconductors is that:
O a.
They have very small dark current.
O b. Their absorption coefficients are quite large.
O c. A large number of photons is needed to boost their
resulting current.
O d. Thin samples are needed for such detectors
O e.
NON of the given choices is correct.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fe1450162-bd1b-4985-94f5-96658bd377cb%2Fc80f00c0-35b0-444e-996c-c7cd7f478073%2Fjylmjs_processed.jpeg&w=3840&q=75)
Transcribed Image Text:The main feature of photo-detectors made of high energy gap semiconductors is that:
O a.
They have very small dark current.
O b. Their absorption coefficients are quite large.
O c. A large number of photons is needed to boost their
resulting current.
O d. Thin samples are needed for such detectors
O e.
NON of the given choices is correct.
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