The main feature of photo-detectors made of high energy gap semiconductors is that: a. They have very small dark current. b. Their absorption coefficients are quite large. C. A large number of photons is needed to boost their resulting current. d. Thin samples are needed for such detectors e. NON of the given choices is correct.
The main feature of photo-detectors made of high energy gap semiconductors is that: a. They have very small dark current. b. Their absorption coefficients are quite large. C. A large number of photons is needed to boost their resulting current. d. Thin samples are needed for such detectors e. NON of the given choices is correct.
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Optoelectronics
Transcribed Image Text:The main feature of photo-detectors made of
high energy gap semiconductors is that:
a.
They have very small dark
current.
b. Their absorption coefficients are
quite large.
C.
A large number of photons is
needed to boost their resulting
current.
d.
Thin samples are needed for such
detectors
e.
NON of the given choices is
correct.
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