The full-bridge inverter is used to produce a 60-Hz voltage across a series RL load using bipolar PWM. The de input to the bridge is 100 V, the amplitude modulation ratio m, is 0.8, and the frequency modulation ratio m, is 21 [fi = (21)(60) = 1260 Hz]. The load has a resistance of R = 10 N and series inductance L = 20 mH. Determine (a) the amplitude of the 60-Hz component of the output voltage and load current, (b) the power absorbed by the load resistor, and (c) the THD of the load current. %3D %3D %3!

The full-bridge inverter is used to produce a 60-Hz voltage across a series RL load using bipolar PWM. The de input to the bridge is 100 V, the amplitude modulation ratio m, is 0.8, and the frequency modulation ratio m, is 21 [fi = (21)(60) = 1260 Hz]. The load has a resistance of R = 10 N and series inductance L = 20 mH. Determine (a) the amplitude of the 60-Hz component of the output voltage and load current, (b) the power absorbed by the load resistor, and (c) the THD of the load current. %3D %3D %3!

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

a ): The depletion region is a layer of positive and negative charge in the semiconductormaterial Briefly explain how the depletion region formed in the semiconductormaterial after the PN junction is created.b): An audio signal amplifier is used to reproduce input audio signals at sound-producoutput elements, with desired volume and power levels. What is the function of volumecontrol and power amplifier in an audio signal amplifier ?
1. Briefly describe what a Schottky junction is and how it is formed. Draw the energy band diagrams of a Schottky junction under equilibrium, forward bias, and reverse bias.
Design the given circuit at Ico = ½ ICSAT and VCEO = 2 Vcc use Vcc = 20 volts, ICSAT = 10 milli ampere, DC beta, B 140 and Rc = 4RE. Vcc %3D %3D Re Rc RE 4. The value of collector resistance (RC) in ohms is 5. The value of emitter current (le) in amperes is 6. The value of the emitter voltage (Ve) in volts is 7. The value of base voltage (Vb) in volts is
Draw the DC circuit: b)DC computations: Compute the DC collector current of each transistor. I_C 1 = ________________________ mA I_C 2= ________________________ Calculations: c)Draw the AC circuit and compute gm, r_pi for the system. g_m 1= _______________________ mA/V r_pi 1 = _______________________ kohms g_m 2= _______________________ mA/V r_pi 2 = _______________________ kohms AC circuit: Calculations: d)Compute the gain A_v=Vo/Vi at the operational band (for sufficiently high frequency) Gain = A_v = ______________________________ Computations:
At high levels of gate current, the characteristics of an SCR approach those of what semiconductor device? a. MOSFET b. BJT c. JFET d. Diode
4. An RC filter stage (R = 33 0, C = 120 HF) is used to filter a signal of 24 V dc with 2 V rms operating from a full wave rectifier. Calculate the percentage ripple at the output of the RC Section for a 100-mA load. Also calculate the ripple of the filtered signal applied to the RC stage. *****END*****
IV. In the circuit with a silicon transistor, as shown in the +Vcc Figure, if Viegic = 3.6 V, Vcc = 10 V, VLED = 2.3 V, RE = 270 2, B = 200, 1. identify the type of transistor in use and label the three terminals in the figure. logic input 2. find the base current. 3. find the collector current. 4. find the collector-emitter voltage. RE
6. Consider the electrical circuits shown in figure a.) and b.). For each circuit determine the transfer function C/2 C12 2R 2R (a) R (b)
TEST Read the question carefully. Write the letter for each correct answer in the blank space provided. A 1. Maximum power is delivered from a source of power to a load when the a. load current is equal to the power source current b. impedance of the load is equal to the output impedance of the power source c. output impedance of the power source is high compared to the impedance of the load d. output impedance of the power source is low compared to the impedance of the load 2. The emitter follower is a (an) a. impedance matching device b. high gain voltage amplifier c. phase inverter d. combination power and voltage amplifier 3. The emitter follower uses a. no collector resistor b. a forward bias collector-base junction c. negative feedback (degeneration) d. an NPN transistor only 4. The emitter follower has output resistance. a. high, high b. low, low c. low, high d. high, low input resistance and 5. The current gain of an emitter follower is a. less than 1 b. equal to 1 c. greater…
[2] What is threshold voltage for MOSFET? Derive the equation of Vt of MOSFET. V = Vto + Y V(2. Pp + |Vsbl) – /2. Pp %D
Determine the ripple factor for the filtered rectifier circuit below when RL= 4KQ. Then explain briefly the effect of changing in the RL value on the output waveform.
8-The waveform of output voltage of half-controlled three phase bridge rectifier in each cycle contains: Two- pulse six- pulse three- pulse 9-The DC supply voltage of single phase bridge inverter is 300V. For quasi-square wave output voltage with a 60 percent ON time, the RMS value of output voltage is: 232.37V 220.5V 270.9V 10-For three phase bridge inverter with 120° conduction and resistive star-connected load, the waveforms of: (a) The load current and line voltage are quasi-square. (b) The load current is quasi-square and line voltage is a six- step. (c) The load current is six- step and line voltage is quasi-square. 9.