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The Fermi energy level in silicon at T band as to the midgap energy. (a) Is the material n type or p type? (b) Calculate the values of no and po. 300 K is as close to the top of the valence

The Fermi energy level in silicon at T band as to the midgap energy. (a) Is the material n type or p type? (b) Calculate the values of no and po. 300 K is as close to the top of the valence

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Question 4.22
Problems 4.20 (a) If Ec - EF = 0.28 eV in gallium arsenide at T = 375 K, calculate the values of no and po. (b) Assuming the value of no in part (a) remains constant, determine E. – EF and po at T = 300 K. %3D 4.21 Repeat Problem 4.20 for silicon. 4.22 The Fermi energy level in silicon at T = 300 K is as close to the top of the valence %3D band as to the midgap energy. (a) Is the material n type or p type? (b) Calculate the values of no and po - 4.23 (a) The Fermi energy level in silicon at T = 300 K is 0.22 eV above the intrinsic Fermi level. Determine no and po. (b) Repeat part (a) for GaAs. 4.24 Silicon at T = 300 K is doped with boron atoms such that the concentration of holes is po = 5 X 1015 cm 3. (a) Find EF- Ep. (b) Determine E. - Ef. (c) Determine no. (d) Which carrier is the majority carrier? (e) Determine Eri - Er. 400 K, assuming the hole concentration remains constant. 300 K if Er- E, = 0.25 eV. 4.25 Repeat Problem 4.24 for T = 4.26 (a) Determine the values of no and po in GaAs at T (b) Assuming the value of po in part (a) remains constant, determine the values of EF - E, and no at T = 400 K. 4.27 Repeat Problem 4.26 for silicon. (h) Reneat
Transcribed Image Text:Problems 4.20 (a) If Ec - EF = 0.28 eV in gallium arsenide at T = 375 K, calculate the values of no and po. (b) Assuming the value of no in part (a) remains constant, determine E. – EF and po at T = 300 K. %3D 4.21 Repeat Problem 4.20 for silicon. 4.22 The Fermi energy level in silicon at T = 300 K is as close to the top of the valence %3D band as to the midgap energy. (a) Is the material n type or p type? (b) Calculate the values of no and po - 4.23 (a) The Fermi energy level in silicon at T = 300 K is 0.22 eV above the intrinsic Fermi level. Determine no and po. (b) Repeat part (a) for GaAs. 4.24 Silicon at T = 300 K is doped with boron atoms such that the concentration of holes is po = 5 X 1015 cm 3. (a) Find EF- Ep. (b) Determine E. - Ef. (c) Determine no. (d) Which carrier is the majority carrier? (e) Determine Eri - Er. 400 K, assuming the hole concentration remains constant. 300 K if Er- E, = 0.25 eV. 4.25 Repeat Problem 4.24 for T = 4.26 (a) Determine the values of no and po in GaAs at T (b) Assuming the value of po in part (a) remains constant, determine the values of EF - E, and no at T = 400 K. 4.27 Repeat Problem 4.26 for silicon. (h) Reneat
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