The cross section of a simple substrate n-channel MOSFET biased above threshold is illustrated below. VGS > VT VSB=0 VDS=0 n+ p-type substrate What is meant by "pinch-off" in a MOSFET and what happens to the channel when pinch-off occurs? How do we add the effect of channel shortening to the MOSFET square law model when VDs > VDSsat? A gate bias of VGS = 2.5 V is applied to a MOSFET with a threshold voltage of V₁ = 0.4 V and substrate doping of N₁ = 5 x 10¹ cm³. The gate oxide thickness is fox = 20 nm and the device has an effective channel length of 2 µm and width of 10 um. If channel shortening can be ignored, what is the channel current. In. for Vps = 1.5V ? ID=0

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The cross section of a simple substrate n-channel MOSFET biased above threshold is illustrated below.
VGS > VT
VSB=0
✓
VDS=0
ID=0
n
n+
p-type substrate
a) What is meant by "pinch-off" in a MOSFET and what happens to the channel when pinch-off occurs?
b) How do we add the effect of channel shortening to the MOSFET square law model when VDS> VDSsat?
c) A gate bias of VGS = 2.5 V is applied to a MOSFET with a threshold voltage of VT=0.4 V and substrate doping of N₁ = 5
x 10¹ cm³. The gate oxide thickness is fox = 20 nm and the device has an effective channel length of 2 μm and width of
10 μm. If channel shortening can be ignored, what is the channel current, ID, for VDs = 1.5V ?
Transcribed Image Text:The cross section of a simple substrate n-channel MOSFET biased above threshold is illustrated below. VGS > VT VSB=0 ✓ VDS=0 ID=0 n n+ p-type substrate a) What is meant by "pinch-off" in a MOSFET and what happens to the channel when pinch-off occurs? b) How do we add the effect of channel shortening to the MOSFET square law model when VDS> VDSsat? c) A gate bias of VGS = 2.5 V is applied to a MOSFET with a threshold voltage of VT=0.4 V and substrate doping of N₁ = 5 x 10¹ cm³. The gate oxide thickness is fox = 20 nm and the device has an effective channel length of 2 μm and width of 10 μm. If channel shortening can be ignored, what is the channel current, ID, for VDs = 1.5V ?
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