The circuit in Figure B1a is a common analogue circuit block.Explain why you would need such a circuit.Draw another circuit in which you use the current flowing in thisloop to bias a common source amplifier.This circuit is not ideal for standard CMOS technologies due tothreshold shift. Why? Draw an improved version of this circuitto make it better.VDD(W)PMA M3.(),REF(쁜)~M₁M2lout시~Rs

Answered: Image /qna-images/answer/28110bda-798c-4cf7-866c-1f8ed4e74399.jpg

Answered: The circuit in Figure B1a is a common…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Modified True or False The subject is basic electronics. please answer my questions. thanks
This question would help revise concepts related to MOS device and basic circuit design. Please mark all correct answers to the following multiple choice questions. 1.1. Which of the following are true about MOSFET devices? (a) MOS stands for "Metallurgy Of Semiconductors" (b) MOSFET current conduction is due to drift phenomenon (c) An externally induced voltage at the gate is fundamental to inversion layer (d) Naming of "Source" and "Drain" regions are only dependent on aspect ratio 1.2. Which of the following are true about NMOS transistors (a) The threshold voltage can be positive or negative depending on geometry (b) Channel length modulation parameter (A) is always positive (c) Current flows from drain to source (d) Threshold voltage is a fixed value based on process, it cannot be changed by external voltages 1.3. In a MOS device (a) Cas and CGp both have both geometry and voltage dependencies (b) Cas is takes minimum value at saturation while CGD goes to maximum value (c) CoB and…
I need answer in ohm value and it must be right
A 3.29-V signal is input to a 12-bit successive approximations converter with an inputrange of 0 to 10 V and simple binary output. Simulate the successive-approximationsprocess to determine the simple binary output.
6. Build the circuit shown in Figure 2 below in PSpice. Note that the power supply V1 is a VSIN power supply in the SOURCE library. Vcc is a VDC supply found in the SOURCE library. Model this circuit using the Time Domain (Transient) Analysis Type with a Run To Time of 2 ms. A. Paste your output graph showing the voltage at the base terminal, collector terminal and at the load. B. What is the voltage gain of the circuit? (Compare the voltage amplitude at the base terminal input (across Rb2) to that at the collector terminal. C. What happens to the output voltage at the collector terminal if the value of Rb1 is reduced by a factor of 10 (to 14.7 kn)? Simulate this situation and explain the result. D. What happens to the output voltage at the collector terminal if the value of Rb1 is increased by a factor of 3 (to 441 k)? Simulate this situation and explain the result. Rb1 RC 147k 1k C2 C1 Q1 Vcc 1u VOFF = 0 Q2N3904 10Vdc VAMPL = 0.1V1 1u FREQ = 2k R_load Rb2 Re AC = 0 250 40k 20 Figure…
Q3:/ consider the following analog waveform. This waveform is sampled at a 500 Hz rate and quantized with a 2-bit quantizer. The input range is (-1.0 to +1.0 v). 1) Circle the sample points. 2) Indicate the quantization intervals. 3) What is the stream of binary bits generated after the conversion process? 4) What is the resulting bit rate?
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
(b) List the steps needed to test any four-terminal MOSFET with the same setup to determine which terminal is the gate, which terminal is the body, whether the device is a N-cha (c) If the gate oxide were destroyed by a static electricity discharge, speculate on how the current readings might be different from those that were observed.Be detailed in your response.
1. Derive an equation for a 6 to 1 multiplexer. 2. Using the equation in (1), produce a gate network for the multiplexer. Use any gate seen in class.
Design the circuits. The last person said "D" is correct. I want my question back for that.
How does the construction of a transistor differ from the construction of a PN junction diode? What are the two types of transistors? What are the three parts of a transistor called? Draw and label the schematic symbols for an NPN and a PNP transistor. What are transistors used for? How are transistors classified? What symbols are used to identify transistors? What purposes does the packaging of a transistor serve? How are transistor packages labeled? What are the basic functions of a transistor? What is the proper method for biasing a transistor? What is the difference between biasing an NPN and a PNP transistor? What is the barrier voltage for a germanium and a silicon transistor? What is the difference between the collector-base junction and the emitter- base junction bias voltages? What may cause a transistor to fail? What are two methods of testing a transistor? When using an ohmmeter, what should the results be for an NPN transistor? What are the two…
Q3) The Voltage-divider bias circuit shown below is to be designed to operate efficiently stabilized. Assume Ic(max) = 16mA and VRE= CC: 1) Find the values of R₁, R2, RE, Rc for maximum output voltage swing. 2) Draw the d.c. load line and a.c. load line on same graph indicating the Q point (VCEQ, Ico). 3) Determine the maximum value to which Vcc can be adjusted without exceeding a rating assuming PDmax=400m W Best wishes from me Barwan Ahmed 10 Vino C₁ R₁ www Vcc +20V R2 Rc C3 Si Tr B=100 Vou RL 1k

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