TABLE 4.6 MOS Transistor Parameters NMOS DEVICE PMOS DEVICE Vro +0.75 V -0.75 V 0.75/V 0.5/V 20F 0.6 V 0.6 V K' 100 μΑ/V2 40 μΑ/V2

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Design a four-resistor bias network for a PMOS
transistor to give a Q-point of (500 μA, −5 V) with
VDD = −15 V and RE Q ≥ 100 kΩ . Use the parameters  (b) Repeat for an NMOS transistor with VDS = +6 V and VDD = +15 V

TABLE 4.6
MOS Transistor Parameters
NMOS DEVICE
PMOS DEVICE
Vro
+0.75 V
-0.75 V
0.75/V
0.5/V
20F
0.6 V
0.6 V
K'
100 μΑ/V2
40 μΑ/V2
Transcribed Image Text:TABLE 4.6 MOS Transistor Parameters NMOS DEVICE PMOS DEVICE Vro +0.75 V -0.75 V 0.75/V 0.5/V 20F 0.6 V 0.6 V K' 100 μΑ/V2 40 μΑ/V2
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