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Silicon thin film are commonly formed by chemical vapor deposition of silane vapor (SiH4) onto a growling solid Si film. If the following chemical reaction occurs on the surface of the solid Si film, which of the follwing flux relationships are true in the stagnant gas phase above the wafer? Select all correct answers below. ( SiH4(g) -> 2H2(g) + Si(s)) a) NSiH4 = -2NH2, b) NSiH4 = 0.5NH2, c) NSiH4 = 2NH2 d) NSiH4 = -0.5NH2 e) NSiH4 = -NSi f) NSiH4 = NSi

Silicon thin film are commonly formed by chemical vapor deposition of silane vapor (SiH4) onto a growling solid Si film. If the following chemical reaction occurs on the surface of the solid Si film, which of the follwing flux relationships are true in the stagnant gas phase above the wafer? Select all correct answers below. ( SiH4(g) -> 2H2(g) + Si(s)) a) NSiH4 = -2NH2, b) NSiH4 = 0.5NH2, c) NSiH4 = 2NH2 d) NSiH4 = -0.5NH2 e) NSiH4 = -NSi f) NSiH4 = NSi

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Silicon thin film are commonly formed by chemical vapor deposition of silane vapor (SiH4) onto a growling solid Si film. If the following chemical reaction occurs on the surface of the solid Si film, which of the follwing flux relationships are true in the stagnant gas phase above the wafer? Select all correct answers below. ( SiH4(g) -> 2H2(g) + Si(s))

a) NSiH4 = -2NH2,

b) NSiH4 = 0.5NH2,

c) NSiH4 = 2NH2

d) NSiH4 = -0.5NH2

e) NSiH4 = -NSi

f) NSiH4 = NSi

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