Silicon tetrachloride, SiCl4, is a key chemical in the silicon chemical vapor deposition. The purity of SiCl4 is essential to the production of high-quality silicon films. To eliminate trichlorosilane, SiHCl3, within the high-purity silicon tetrachloride, chlorine gas is bubbled through the liquid SiCl4 at 298 K to promote the following reaction: SiHCl3 + Cl2  SiCl4 + HCl The HCl is then easily removed in a stripper, using nitrogen as the stripping gas. To determine the mass-transfer coefficient of chlorine in liquid SiCl4, a Schmidt number is needed. Evaluate the Schmidt number for chlorine in liquid silicon tetrachloride at 298 K. The following information is available for SiCl4 at 298 K: ρL = 1.47 g/cm3 and μL = 5.2 * 10-4 kg/m.s The diffusivity for chlorine in silicon tetrachloride can be evaluated using the Wilke–Chang equation.

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