Silicon carbide is produced by heating silicon dioxide and carbon at high temperatures as shown by the reaction below. How many grams of SiC can be formed by reacting 2.00g of silicon dioxide and 2.00 grams of carbon? SiO2 (s) + 3C(s)→ SiC(s) + 2CO(g) -> How much excess reactant is left over?

Silicon carbide is produced by heating silicon dioxide and carbon at high temperatures as shown by the reaction below. How many grams of SiC can be formed by reacting 2.00g of silicon dioxide and 2.00 grams of carbon? SiO2 (s) + 3C(s)→ SiC(s) + 2CO(g) -> How much excess reactant is left over?

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...

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Stoichiometry

Stoichiometry is a chemical division that evaluates the quantitative content of the chemical process with the help of the reacting molecules or products taking part in the reaction. The term “stoicheion” in “Stoichiometry”, is an old Greek term for "element" whereas “metron” means "measure".

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Silicon carbide is produced by heating silicon dioxide and carbon at high temperatures as shown by the reaction
below. How many grams of SiC can be formed by reacting 2.00g of silicon dioxide and 2.00 grams of carbon?
SiO, (s) + 3C(s)→ SiC(s) + 2CO(g)
How much excess reactant is left over?
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