side a bell jar, and chemical vapors are introduced.  The susceptor is rotated and heat is applied until the epitaxial layer is thick enough.  An experiment was run using two factors:  arsenic flow rate (A) and deposition time (B).  Four r

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 A basic processing step is to grow an epitaxial layer on polished silicon wafers.  The wafers mounted on a susceptor are positioned inside a bell jar, and chemical vapors are introduced.  The susceptor is rotated and heat is applied until the epitaxial layer is thick enough.  An experiment was run using two factors:  arsenic flow rate (A) and deposition time (B).  Four replicates were run, and the epitaxial layer thickness was measured (in mm).  The data are shown below:
 
     
Replicates
    factors
Levels
 
A
B
I
II
III
IV
 
Low (-)
High (+)
-
-
14.037
16.165
13.972
13.907
A
55%
59%
+
-
13.88
13.86
14.032
13.914
     
-
+
14.821
14.757
14.843
14.878
B
Short
Long
+
+
14.888
14.921
14.415
14.932
 
(10mins)
(15mins)
 
  1. Which effects appear to be large? Use the analysis of variance to confirm your conclusions.
  2. Provide the regression model based on the results of this experiment.
 
Ftable(α=0.1) = 3.17655
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