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Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm³. (a) Is this n-type or p-type and why? (b) What are the electron and hole concentrations at 300K? (use n¡ = 1010 cm³). (c) Calculate resistivity of Si is doped with donor density of Np = 2x1015 (use n¡ = 10'10 cm³) and NA = 0 (use n¡ = 1010 cm³; µn = 1320 cm²/Vs, µp = 460 cm²/Vs) (d) In a Germanium semiconductor at T= 250 K (n¡ = 1x101² cm³3), it is found that that Na = 0. Determine po, no, and Na. Po 4no and

Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm³. (a) Is this n-type or p-type and why? (b) What are the electron and hole concentrations at 300K? (use n¡ = 1010 cm³). (c) Calculate resistivity of Si is doped with donor density of Np = 2x1015 (use n¡ = 10'10 cm³) and NA = 0 (use n¡ = 1010 cm³; µn = 1320 cm²/Vs, µp = 460 cm²/Vs) (d) In a Germanium semiconductor at T= 250 K (n¡ = 1x101² cm³3), it is found that that Na = 0. Determine po, no, and Na. Po 4no and

Chemistry for Engineering Students
Chemistry for Engineering Students
4th Edition
ISBN:9781337398909
Author:Lawrence S. Brown, Tom Holme
Publisher:Lawrence S. Brown, Tom Holme
Chapter8: Molecules And Materials
Section: Chapter Questions
Problem 8.96PAE: 8.96 A business manager wants to provide a wider range of p- and n-type semiconductors as a strategy...
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Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm³. (a) Is this n-type or p-type and why? (b) What are the electron and hole concentrations at 300K? (use ni = 1010 cm³). (c) Calculate resistivity of Si is doped with donor density of Np = 2x1015 (use n¡ = 10!º cm³) and NA = 0 (use n¡ = 1010 ; µn = 1320 cm²/Vs, µp = 460 cm²/Vs) cm (d) In a Germanium semiconductor at T= 250 K (n¡ = 1x1012 cm³), it is found that po = 4no and that Nd = 0. Determine po, no, and Na. (e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K: Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x1031 K*.cm3 (1.12eV) and B = 2.31x1030 K³.cm³ (0.66€V).
Transcribed Image Text:Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm³. (a) Is this n-type or p-type and why? (b) What are the electron and hole concentrations at 300K? (use ni = 1010 cm³). (c) Calculate resistivity of Si is doped with donor density of Np = 2x1015 (use n¡ = 10!º cm³) and NA = 0 (use n¡ = 1010 ; µn = 1320 cm²/Vs, µp = 460 cm²/Vs) cm (d) In a Germanium semiconductor at T= 250 K (n¡ = 1x1012 cm³), it is found that po = 4no and that Nd = 0. Determine po, no, and Na. (e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K: Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x1031 K*.cm3 (1.12eV) and B = 2.31x1030 K³.cm³ (0.66€V).
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