QUESTION 7 Calculate the probability that a state in the conduction band is occupied by an electron and the thermal equilibrium electron concentration in a silicon semiconductor at 100 °k. The Fermi energy is 0.25 eV below the conduction band. The value of Nc for silicon at 100 °k is 2.8x1019cm3 O a. 3.46x10-6 and 1.8 x 1019 cm3 O b.4.63x10-3 and 1.6 x 1017 O c. 6.43x10-5 and 1.8 x 1015 cm 3 cm -3 Od. 6.34x10-3 and 1.8 x 1017 cm 3
QUESTION 7 Calculate the probability that a state in the conduction band is occupied by an electron and the thermal equilibrium electron concentration in a silicon semiconductor at 100 °k. The Fermi energy is 0.25 eV below the conduction band. The value of Nc for silicon at 100 °k is 2.8x1019cm3 O a. 3.46x10-6 and 1.8 x 1019 cm3 O b.4.63x10-3 and 1.6 x 1017 O c. 6.43x10-5 and 1.8 x 1015 cm 3 cm -3 Od. 6.34x10-3 and 1.8 x 1017 cm 3
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Transcribed Image Text:QUESTION 7
Calculate the probability that a state in the conduction band is occupied by an electron and the thermal equilibrium electron concentration in a silicon
semiconductor at 100 °k. The Fermi energy is 0.25 eV below the conduction band. The value of Nc for silicon at 100 °k is 2.8x1019cm-
3
a. 3.46x10-6 and 1.8 x 1019 cm-3
b.4.63x10-3 and 1.6 x 1017 cm 3
C. 6.43x10-5 and 1.8 x 1015 cm 3
d. 6.34x10-3 and 1.8 x 101 cm3
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