QUESTION 5 What equal and opposite voltage can be applied to the EB and CB junctions (assume VEB=- VCB > 3*VT) to make the slope of the minority carrier concentration exactly 4.4x1010/cm^4? /cc, Assume this is a PNP silicon transistor at 300K, the silicon emitter is doped as 8.5*10% the base is doped as 7*1016/cc, and the collector is doped as 1.8*1015/cc, The metallurgical width of the base is 1.04 microns, and ignore narrowing of the base by depletion widths, and assume the minority carrier distribution is linear in the base. Use three significant digits and fixed point notation.

QUESTION 5 What equal and opposite voltage can be applied to the EB and CB junctions (assume VEB=- VCB > 3VT) to make the slope of the minority carrier concentration exactly 4.4x1010/cm^4? /cc, Assume this is a PNP silicon transistor at 300K, the silicon emitter is doped as 8.510% the base is doped as 71016/cc, and the collector is doped as 1.81015/cc, The metallurgical width of the base is 1.04 microns, and ignore narrowing of the base by depletion widths, and assume the minority carrier distribution is linear in the base. Use three significant digits and fixed point notation.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Subject : Electronics Engineering
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