QUESTION 1 If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 65 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively.
QUESTION 1 If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 65 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively.
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Question 1
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QUESTION 1
If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the
depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 65 microns. Assume p and
n mobilities are 500 & 1500 cm^2/(V*s) respectively.
QUESTION 2
If we have silicon at 300K with 10 microns of p-type doping of 1.8*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the
depletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 62 microns. Assume p and
n mobilities are 500 & 1500 cm^2/(V*s) respectively.
QUESTION 3
What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 6.3*10^14/cc, 1000 times more donor
doping, and forward bias of 0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V. Answer should be to two
significant digits with fixed point notation,
QUESTION 4
How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 6.1*10^15/cc, and
forward bias of 0.57 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant
digits with fixed point notation.
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Transcribed Image Text:uestion Completion Status
QUESTION 1
If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the
depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 65 microns. Assume p and
n mobilities are 500 & 1500 cm^2/(V*s) respectively.
QUESTION 2
If we have silicon at 300K with 10 microns of p-type doping of 1.8*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the
depletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 62 microns. Assume p and
n mobilities are 500 & 1500 cm^2/(V*s) respectively.
QUESTION 3
What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 6.3*10^14/cc, 1000 times more donor
doping, and forward bias of 0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V. Answer should be to two
significant digits with fixed point notation,
QUESTION 4
How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 6.1*10^15/cc, and
forward bias of 0.57 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant
digits with fixed point notation.
Click Save and Submit to save and submit. Click Save All Answers to save all answers.
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