Question 1 uestion Completion StatusQUESTION 1If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside thedepletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 65 microns. Assume p andn mobilities are 500 & 1500 cm^2/(V*s) respectively.QUESTION 2If we have silicon at 300K with 10 microns of p-type doping of 1.8*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside thedepletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 62 microns. Assume p andn mobilities are 500 & 1500 cm^2/(V*s) respectively.QUESTION 3What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 6.3*10^14/cc, 1000 times more donordoping, and forward bias of 0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V. Answer should be to twosignificant digits with fixed point notation,QUESTION 4How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 6.1*10^15/cc, andforward bias of 0.57 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significantdigits with fixed point notation.Click Save and Submit to save and submit. Click Save All Answers to save all answers.

Given: Length, L = 10 microns = 0.001 cm 10 microns of p type doping, p = 4.26×1018/cc 10 microns of…

QUESTION 1 If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 65 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively.