QUESTION 1 A voltage is following this equation, V(t)= V(0) x exp What is T in microseconds if the voltage goes from 8.1 volts to 5.7 volts in 42 %3D microseconds? Three significant digits and fixed point notation.

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QUESTION 1
A voltage is following this equation, V(t) = V(0) x exp-
%3D
What is T in microseconds if the voltage goes from 8.1 volts to 5.7 volts in 42
microseconds? Three significant digits and fixed point notation.
QUESTION 2
The circuit in laboratory #2 is passing 3.68 mA of DC current until the strobe is turned on. The strobe is flashing at 2,435.3 RPM. The minority carrier
lifetime is 9 microseconds, and the increase in current is 186 microamps. What is the increase in average DC current in milliamps. Three significant
digits and exponential notation, i.e. 1.23e-4
QUESTION 3
What is the typical way that electron-hole recombination can occur in an indirect semiconductor?
O 1. Electrons and holes can recombine at the surface of a semiconductor.
O 2. Electrons and holes can recombine at traps in the energy.gap and close to the minimum in the conduction band.
O 3. Electrons in the conduction band can annihilate holes in the valence band and vice-versa.
O 4. Electrons and holes can recombine at traps in the energy gap and close to the maximum in the valence band.
O 5. Electrons and holes can recombine with an Auger process.
O 6. Electrons and holes can recombine at traps located in the middle of the energy gap.
Transcribed Image Text:Question Completion Status: QUESTION 1 A voltage is following this equation, V(t) = V(0) x exp- %3D What is T in microseconds if the voltage goes from 8.1 volts to 5.7 volts in 42 microseconds? Three significant digits and fixed point notation. QUESTION 2 The circuit in laboratory #2 is passing 3.68 mA of DC current until the strobe is turned on. The strobe is flashing at 2,435.3 RPM. The minority carrier lifetime is 9 microseconds, and the increase in current is 186 microamps. What is the increase in average DC current in milliamps. Three significant digits and exponential notation, i.e. 1.23e-4 QUESTION 3 What is the typical way that electron-hole recombination can occur in an indirect semiconductor? O 1. Electrons and holes can recombine at the surface of a semiconductor. O 2. Electrons and holes can recombine at traps in the energy.gap and close to the minimum in the conduction band. O 3. Electrons in the conduction band can annihilate holes in the valence band and vice-versa. O 4. Electrons and holes can recombine at traps in the energy gap and close to the maximum in the valence band. O 5. Electrons and holes can recombine with an Auger process. O 6. Electrons and holes can recombine at traps located in the middle of the energy gap.
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