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Q2/B-Consider a CMOS process 6/7 for which Lmin = O.25 µm,tox= 6 nm, µn= 460 cm2/V-s, and Vt= 0.5 V.(a) Find Cox and kn.(b) For an NMOS transistor with W/L = 40 um/0.45 µm,calculate the values of Vov , VGS , and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 0.7 mA.(c) For the device in (b), find the values of Vov and VGS

Q2/B-Consider a CMOS process 6/7 for which Lmin = O.25 µm,tox= 6 nm, µn= 460 cm2/V-s, and Vt= 0.5 V.(a) Find Cox and kn.(b) For an NMOS transistor with W/L = 40 um/0.45 µm,calculate the values of Vov , VGS , and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 0.7 mA.(c) For the device in (b), find the values of Vov and VGS

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Q2/B-Consider a CMOS process 6/7 for which Lmin = 0.25 µm,tox= 6 nm, µn= 460 cm2/V-s, and Vt= 0.5 V.(a) Find Cox and kn.(b) For an NMOS transistor with W/L = 40 um/0.45 µm,calculate the values of Vov , VGS , and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 0.7 mA.(c) For the device in (b), find the values of Vov and VGS required to cause the device to operate as a 150 Kohm resistor for very small VDS.
Transcribed Image Text:Q2/B-Consider a CMOS process 6/7 for which Lmin = 0.25 µm,tox= 6 nm, µn= 460 cm2/V-s, and Vt= 0.5 V.(a) Find Cox and kn.(b) For an NMOS transistor with W/L = 40 um/0.45 µm,calculate the values of Vov , VGS , and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 0.7 mA.(c) For the device in (b), find the values of Vov and VGS required to cause the device to operate as a 150 Kohm resistor for very small VDS.
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