Q1. Consider an extrinsic Silicon doped with Indium atoms at a con energy for Indium is given as 0.16eV. Calculate:XX=44 a) The carrier concentrations n, Po and the Fermi level Er 40+ xx No cm, fo 100 b) The temperature at which P. = 60+ XX Np cm, fo 100 (Ex: xx = 00 → Po 0.4N =1.6x10° cm; xx = 99 %3D
Q1. Consider an extrinsic Silicon doped with Indium atoms at a con energy for Indium is given as 0.16eV. Calculate:XX=44 a) The carrier concentrations n, Po and the Fermi level Er 40+ xx No cm, fo 100 b) The temperature at which P. = 60+ XX Np cm, fo 100 (Ex: xx = 00 → Po 0.4N =1.6x10° cm; xx = 99 %3D
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Transcribed Image Text:Q1. Consider an extrinsic Silicon doped with Indium atoms at a concentration of N= 4x10cm, The ionization
%3D
energy for Indium is given as 0.16eV. Calculate:
XX-44
a) The carrier concentrations n,, Po and the Fermi level E - Ep at the temperature of T = xx + 60 °K .
40+ xX
N, cm, for xx < 50
100
b) The temperature at which P, =
60+ xX
N, cm, for xx2 50
100
D.
(Ex: xx = 00 → P, = 0.4N=1.6x1o cm; xx= 99 → P, = 1.59N, = 6.36x10 cm)
c) Using a computer program, plot Po (T) versus temperature over the range 0ST S 800 °K in linear
and logarithmic scale.
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