Q.4. The slurry of CaCOa/water is to be filtered in a press having a total area of 8 m? and operated at a constant pressure drop of 2 atm. The frames are 36 mm thick. Assume that the filter medium resistance in the large press is the same as that in the laboratory filter. Calculate the filtration time required and the volume of filtrate obtained in one cycle. Given: viscosity of filtrate =6.6 X104 Ib/ft-s Density of the cake= 73 lb/ft3 Mass of solids deposited in filter per unit volume of filtrate = 10.9 Ib /ft3 Specific cake resistance = 12.7 X1010 ft/lb Filter medium resistance = 1.55 X1010 ft-1

Q.4. The slurry of CaCOa/water is to be filtered in a press having a total area of 8 m? and operated at a constant pressure drop of 2 atm. The frames are 36 mm thick. Assume that the filter medium resistance in the large press is the same as that in the laboratory filter. Calculate the filtration time required and the volume of filtrate obtained in one cycle. Given: viscosity of filtrate =6.6 X104 Ib/ft-s Density of the cake= 73 lb/ft3 Mass of solids deposited in filter per unit volume of filtrate = 10.9 Ib /ft3 Specific cake resistance = 12.7 X1010 ft/lb Filter medium resistance = 1.55 X1010 ft-1

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...

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Give clear handwritten Solution: Pressure of 50.0 psi is used to drive hexane through a 4.00 m length of capillary of 7.50 um diameter. Calculate the average flow velocity (v).
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Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 2.5 x 101⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 x 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 x 10-4 m²/s, respectively. min