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Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 2.5 x 101⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 x 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 x 10-4 m²/s, respectively. min

Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 2.5 x 101⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 x 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 x 10-4 m²/s, respectively. min

Chemistry
Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Chapter1: Chemical Foundations
Section: Chapter Questions
Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
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Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be \(2.5 \times 10^{19} \, \text{atoms/m}^3\). The drive-in diffusion treatment is to be carried out at \(1050^\circ \text{C}\) for a period of 4.0 h, which gives a junction depth \(x_j\) of 3.0 μm. Compute the predeposition diffusion time at \(950^\circ \text{C}\) if the surface concentration is maintained at a constant level of \(2 \times 10^{25} \, \text{atoms/m}^3\). For the diffusion of Al in Si, values of \(Q_d\) and \(D_0\) are 3.41 eV and \(1.38 \times 10^{-4} \, \text{m}^2/\text{s}\), respectively. ![info] [min]
Transcribed Image Text:Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be \(2.5 \times 10^{19} \, \text{atoms/m}^3\). The drive-in diffusion treatment is to be carried out at \(1050^\circ \text{C}\) for a period of 4.0 h, which gives a junction depth \(x_j\) of 3.0 μm. Compute the predeposition diffusion time at \(950^\circ \text{C}\) if the surface concentration is maintained at a constant level of \(2 \times 10^{25} \, \text{atoms/m}^3\). For the diffusion of Al in Si, values of \(Q_d\) and \(D_0\) are 3.41 eV and \(1.38 \times 10^{-4} \, \text{m}^2/\text{s}\), respectively. ![info] [min]
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