Q.3 [Total: 25 marks] The schematic of a inverter using a single MOSFET transistor is shown below: VDD R Vo Vi The threshold voltage of the transistor Q1 is VT| = 1V and channel length modulation can be neglected. (a) Identify a suitable model of the transistor for analysing the above circuit and describe the model mathematically, graphically or as an equivalent circuit. Sketch the voltage-voltage transfer characteristic, Vo-Vi, for the circuit, clearly identifying the state of the transistor based on the pro- posed model. [10 marks] (b) If the transistor is saturated where V; < VA and not saturated where V; > VA, derive an expression for Volv₁₁ in terms of the relevant circuit and transistor parameters. If kn Volv=v in terms of VDD. = Vi=VA 100 μAV-2 and R = © 100k, determine [8 marks] (c) Assuming no leakage current, calculate the Vmin of the inverter. If, OH instead, there is a leakage current with equivalent resistance of 3 M when VGS < VÃ, determine the adjusted Vmin. Calculate the power lost when Vi VT = in these circumstances. OH. [7 marks]
Q.3 [Total: 25 marks] The schematic of a inverter using a single MOSFET transistor is shown below: VDD R Vo Vi The threshold voltage of the transistor Q1 is VT| = 1V and channel length modulation can be neglected. (a) Identify a suitable model of the transistor for analysing the above circuit and describe the model mathematically, graphically or as an equivalent circuit. Sketch the voltage-voltage transfer characteristic, Vo-Vi, for the circuit, clearly identifying the state of the transistor based on the pro- posed model. [10 marks] (b) If the transistor is saturated where V; < VA and not saturated where V; > VA, derive an expression for Volv₁₁ in terms of the relevant circuit and transistor parameters. If kn Volv=v in terms of VDD. = Vi=VA 100 μAV-2 and R = © 100k, determine [8 marks] (c) Assuming no leakage current, calculate the Vmin of the inverter. If, OH instead, there is a leakage current with equivalent resistance of 3 M when VGS < VÃ, determine the adjusted Vmin. Calculate the power lost when Vi VT = in these circumstances. OH. [7 marks]
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Related questions
Question
Part c Assuming no leakage current, calculate the V
min
OH of the inverter. If,
instead, there is a leakage current with equivalent resistance of 3 MΩ
when VGS < VT , determine the adjusted V
min
OH . Calculate the power lost
when Vi =
VT
2
in these circumstances.
![Q.3
[Total: 25 marks]
The schematic of a inverter using a single MOSFET transistor is shown below:
VDD
R
Vo
Vi
The threshold voltage of the transistor Q1 is VT| = 1V and channel length
modulation can be neglected.
(a) Identify a suitable model of the transistor for analysing the above circuit
and describe the model mathematically, graphically or as an equivalent
circuit. Sketch the voltage-voltage transfer characteristic, Vo-Vi, for the
circuit, clearly identifying the state of the transistor based on the pro-
posed model.
[10 marks]
(b) If the transistor is saturated where V; < VA and not saturated where V; >
VA, derive an expression for Volv₁₁ in terms of the relevant circuit and
transistor parameters. If kn
Volv=v in terms of VDD.
=
Vi=VA
100 μAV-2 and R
= © 100k, determine
[8 marks]
(c) Assuming no leakage current, calculate the Vmin of the inverter. If,
OH
instead, there is a leakage current with equivalent resistance of 3 M
when VGS < VÃ, determine the adjusted Vmin. Calculate the power lost
when Vi
VT
= in these circumstances.
OH.
[7 marks]](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F970302c0-306c-441d-8c3d-d4b84ab5b4f9%2F6980ce28-6a55-483a-bf49-cd8aa724fe5c%2Fa2siweh_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q.3
[Total: 25 marks]
The schematic of a inverter using a single MOSFET transistor is shown below:
VDD
R
Vo
Vi
The threshold voltage of the transistor Q1 is VT| = 1V and channel length
modulation can be neglected.
(a) Identify a suitable model of the transistor for analysing the above circuit
and describe the model mathematically, graphically or as an equivalent
circuit. Sketch the voltage-voltage transfer characteristic, Vo-Vi, for the
circuit, clearly identifying the state of the transistor based on the pro-
posed model.
[10 marks]
(b) If the transistor is saturated where V; < VA and not saturated where V; >
VA, derive an expression for Volv₁₁ in terms of the relevant circuit and
transistor parameters. If kn
Volv=v in terms of VDD.
=
Vi=VA
100 μAV-2 and R
= © 100k, determine
[8 marks]
(c) Assuming no leakage current, calculate the Vmin of the inverter. If,
OH
instead, there is a leakage current with equivalent resistance of 3 M
when VGS < VÃ, determine the adjusted Vmin. Calculate the power lost
when Vi
VT
= in these circumstances.
OH.
[7 marks]
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